型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A )

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

IRF

Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A )

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

IRF

IRFR13N20DCTRLP产品属性

  • 类型

    描述

  • 型号

    IRFR13N20DCTRLP

  • 功能描述

    MOSFET N-CH 200V 13A DPAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-15 11:04:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
IR
1923+
TO-252
6896
原装进口现货库存专业工厂研究所配单供货
IR
23+
TO-252
50000
全新原装正品现货,支持订货
IR
24+
TO-252
39
IR
26+
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-252
8964
只做原装假一赔十
Infineon(英飞凌)
25+
TO-252-2(DPAK)
21000
原装正品现货,原厂订货,可支持含税原型号开票。
IR
23+24
TO-252
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
IR
22+
TO-252
8000
原装正品支持实单
IR
22+
TO-252
6000
终端可免费供样,支持BOM配单

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