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IRFR13N15D价格
参考价格：￥2.0191
型号：IRFR13N15DPBF 品牌：International 备注：这里有IRFR13N15D多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR13N15D批发/采购报价，IRFR13N15D行情走势销售排行榜，IRFR13N15D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N15D | N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IRFR13N15D | SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | |
IRFR13N15D | Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | |
IRFR13N15D | 采用 D-Pak 封装的 150V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF | | ||
SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | KERSEMI | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | ||
High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | ||
High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | ||
N-Channel 150 V (D-S) MOSFET 文件：2.00718 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFR13N15D产品属性
- 类型
描述
- 型号
IRFR13N15D
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 150V 14A 3PIN DPAK - Rail/Tube
- 制造商
International Rectifier
- 功能描述
14 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+24 |
TO-252 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
1923+ |
TO-252 |
5000 |
正品原装品质假一赔十 |
|||
IR |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
INFINEON/英飞凌 |
22+ |
TO3P |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
INFINEON/IR |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IFC |
23+ |
900000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
25+ |
TO-252 |
27500 |
原装正品,价格最低! |
|||
IR |
25+ |
SOT252 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IRFR13N15D规格书下载地址
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IRFR13N15D数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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DdatasheetPDF页码索引
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