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IRFR13N15DPBF价格
参考价格：￥2.0191
型号：IRFR13N15DPBF 品牌：International 备注：这里有IRFR13N15DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR13N15DPBF批发/采购报价，IRFR13N15DPBF行情走势销售排行榜，IRFR13N15DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N15DPBF | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF |   | |
IRFR13N15DPBF | SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | KERSEMI | | |
IRFR13N15DPBF | High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | |
IRFR13N15DPBF | High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | |
High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFR13N15DPBF产品属性
- 类型
描述
- 型号
IRFR13N15DPBF
- 功能描述
MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DPAK |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
IFC |
23+ |
900000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
22+ |
TO-252 |
21350 |
原装正品，实单请联系 |
|||
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原装正品，支持实单 |
IRFR13N15DPBF规格书下载地址
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IRFR13N15DPBF数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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