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IRFR13N15DPBF价格
参考价格：￥2.0191
型号：IRFR13N15DPBF 品牌：International 备注：这里有IRFR13N15DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR13N15DPBF批发/采购报价，IRFR13N15DPBF行情走势销售排行榜，IRFR13N15DPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N15DPBF | HEXFETPowerMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | IRF International Rectifier |  |   |
IRFR13N15DPBF | SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR13N15DPBF | HighfrequencyDC-DCconverters 文件：228.09 Kbytes Page：11 Pages | IRF International Rectifier | | |
IRFR13N15DPBF | HighfrequencyDC-DCconverters 文件：228.09 Kbytes Page：11 Pages | IRF International Rectifier | | |
HighfrequencyDC-DCconverters 文件：228.09 Kbytes Page：11 Pages | IRF International Rectifier | | | |
PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A) Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | IRF International Rectifier | | | |
SMPSMOSFET Benefits •LowGate-to-DrainChargetoReduceSwitchingLosses •FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) •FullyCharacterizedAvalancheVoltageandCurrent Applications •HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •HighfrequencyDC-DCconverters •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFR13N15DPBF产品属性
- 类型
描述
- 型号
IRFR13N15DPBF
- 功能描述
MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
32365 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
1540+ |
TO-252 |
75 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
国产 |
|||
Infineon Technologies |
21+ |
D-Pak |
2000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
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IRFR13N15DPBF规格书下载地址
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IRFR13N15DPBF数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
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联系人张生电话19926428992QQ1924037095
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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IRFP460PBF原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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