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IRFR13N15DTRPBF价格
参考价格：￥3.1296
型号：IRFR13N15DTRPBF 品牌：IR 备注：这里有IRFR13N15DTRPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR13N15DTRPBF批发/采购报价，IRFR13N15DTRPBF行情走势销售排行榜，IRFR13N15DTRPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N15DTRPBF | High frequency DC-DC converters 文件：228.09 Kbytes Page：11 Pages | IRF |   | |
IRFR13N15DTRPBF | N-Channel 150 V (D-S) MOSFET 文件：2.00718 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SMPS MOSFET Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | KERSEMI | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A) Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | KERSEMI | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IRFR13N15DTRPBF产品属性
- 类型
描述
- 型号
IRFR13N15DTRPBF
- 功能描述
MOSFET MOSFT 150V 14A 180mOhm 19nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+23+ |
TO-252 |
27952 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
IR |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
22+ |
TO3P |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
Infineon/英飞凌 |
24+ |
D-pak |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
2023+ |
TO-252 |
1000 |
专注全新正品,优势现货供应 |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-252 |
58000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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IRFR13N15DTRPBF规格书下载地址
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IRFR13N15DTRPBF数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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联系人张生 电话19926428992 QQ1924037095
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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