N-CHANNEL POWER MOSFET

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POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.)

IEEE802.3af Compatible

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

Avalanche Rugged Technology

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

Avalanche Rugged Technology

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

Avalanche Rugged Technology

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

HEXFET TRANSISTOR

100 Volt, 0.077 Ohm HEXFET The HEXFET® technology is the key to international Rectifiers advance line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. FEATURES: ■ Repetitive Avalanche Rating ■ Isolated and Her

REPETITIVE AVALANCHE RATED AND dv/dt RATED

REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRNANSISTOR 100 Volt, 0.07 Ohm HEXFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 34A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.07Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Advanced Power MOSFET (200V, 1.5ohm, 0.77A)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.)

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.)

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

POWER MOSFET THRU-HOLE (TO-254AA)

200V. N-CHANNEL Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Sealed ■ Electrically Isolated ■ Dynamic dv/dt Rating ■ Light-weight

POWER MOSFET THRU-HOLE

200V, N-CHANNEL HEXFET® MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of th

POWER MOSFET THRU-HOLE (TO-254AA)

Part Number RDS(on) ID IRFM250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductan

N–CHANNEL POWER MOSFET

VDSS 200V ID(cont) 27.4A RDS(on) 0.100Ω FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE • INTEGRAL PROTECTION DIODE • HERMETIC ISOLATED TO-254 PACKAGE • CERAMIC SURFACE MOUNT PACKAGE OPTION

TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on state resistance combined with high transconductance. HEXFET transistors also feature all of the well established advantages of MOSFETs

400V. N-CHANNEL HEXFET MOSFETTECHNOLOGY

POWER MOSFET THRU-HOLE (TO-254AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

POWER MOSFET THRU-HOLE (TO-254AA)

Part Number RDS(on) ID IRFM350 0.315 Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transis

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23 A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. Features: ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Seale

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

POWER MOSFET THRU-HOLE (TO-254AA)

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

MOSFET

Features VDS (V) = 25V RDS(ON)

Lower switching losses

Features VDS (V) = 25V RDS(ON) 24m (VGS = 10V) RDS(ON) 41m (VGS = 4.5V) Benefits Lower switching losses Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability

MOSFET

Features VDS (V) = 25V RDS(ON)

60V, N-CHANNEL

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