isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23 A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

Simple Drive Requirements

文件：253.7 Kbytes Page：7 Pages

MOSFETs and JFETs

HiRel MOSFETs

Simple Drive Requirements

文件：253.7 Kbytes Page：7 Pages

高可靠性功率 MOSFET

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages