400V, N-CHANNEL HEXFET MOSFETTECHNOLOGY

HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, s

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23 A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Simple Drive Requirements

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MOSFETs and JFETs

HiRel MOSFETs

Simple Drive Requirements

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Single channel high reliability power MOSFETs

Celeron D Processor

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Double Coated Tape with Quick Bonding Adhesive 360

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Programmable XO

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COMPACT, LOW-PROFILE SOLUTION FOR A BROAD RANGE OF FILTRATION APPLICATIONS

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360W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

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