IEEE802.3af Compatible

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

Avalanche Rugged Technology

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

Avalanche Rugged Technology

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

100V N沟道A-FET / IRFM120的替代器件

N-Channel A-FET / Substitute of IRFM120 100V, 2.3A, 0.2Ω •雪崩耐用技术\n•耐用栅极氧化物技术\n•降低输入电容\n•增加的栅极电荷\n• Extended Safe Operating Area\n• Lower Leakage Current : 10 μA (Max.) @ VDS = 100 V\n• Lower rDS(on) : 0.155 Ω (Typ.);

Advanced Power MOSFET

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N-Channel 100-V (D-S) MOSFET

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Avalanche Rugged Technology

IEEE802.3af Compatible FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ❐ Lower RDS(ON) : 0.155 Ω (Typ.)

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll