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IRFB31N20DPBF价格
参考价格：￥4.4757
型号：IRFB31N20DPBF 品牌：International 备注：这里有IRFB31N20DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB31N20DPBF批发/采购报价，IRFB31N20DPBF行情走势销售排行榜，IRFB31N20DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A ) Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF |   | |
IRFB31N20DPBF | THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | |
IRFB31N20DPBF | High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | |
IRFB31N20DPBF | High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | |
High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | |
IRFB31N20DPBF产品属性
- 类型
描述
- 型号
IRFB31N20DPBF
- 功能描述
MOSFET MOSFT 200V 31A 82mOhm 70nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-220AB |
7616 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
24+ |
TO-220 |
29971 |
保证进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IR(国际整流器) |
24+ |
N/A |
13048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ir |
23+ |
NA |
559 |
专做原装正品,假一罚百! |
|||
Infineon/英飞凌 |
21+ |
TO-220AB |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
3099 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220-3 |
2946 |
||||
TO-220 |
10000 |
原装长期供货! |
|||||
IR/INFINEON |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
IRFB31N20DPBF芯片相关品牌
IRFB31N20DPBF规格书下载地址
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IRFB31N20DPBF数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRFB3607PBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
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