IRFS31N20D价格
参考价格：￥12.8093
型号：IRFS31N20DHR 品牌：International Rectifier 备注：这里有IRFS31N20D多少钱，2026年最近7天走势，今日出价，今日竞价，IRFS31N20D批发/采购报价，IRFS31N20D行情走势销售排行榜，IRFS31N20D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF |   | |
IRFS31N20D | 采用 D2-Pak 封装的 200V 单 N 通道 HEXFET 功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 具备完全特性化的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 具备完全特性化的的电容，包括有效的Coss以简化设计; | INFINEON 英飞凌 | | |
IRFS31N20D | 丝印代码：D2PAK；Isc N-Channel MOSFET Transistor 文件：188.98 Kbytes Page：2 Pages | ISC 无锡固电 | | |
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A ) Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | ||
High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A ) Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | |
IRFS31N20D产品属性
- 类型
描述
- Package ：
D2PAK (TO-263)
- VDS max：
200.0V
- RDS (on) max：
82.0mΩ
- RDS (on)(@10V) max：
82.0mΩ
- Polarity ：
N
- ID (@ TC=100°C) max：
22.0A
- ID max：
22.0A
- ID (@ TC=25°C) max：
31.0A
- Ptot max：
200.0W
- QG ：
70.0nC
- Mounting ：
SMD
- Moisture Sensitivity Level ：
1
- Qgd ：
33.0nC
- Tj max：
175.0°C
- RthJC max：
0.75K/W
- VGS max：
30.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
D2PAK |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ir |
26+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
Infineon(英飞凌) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
IR |
24+ |
TO263 |
13000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
26+ |
TSSOP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
26+ |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRFS31N20D规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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