位置：首页 > IC中文资料第4873页 > IRFSL31N20D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFSL31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF |   | |
IRFSL31N20D | MOSFET N-CH 200V 31A TO-262 | Infineon 英飞凌 | | |
IRFSL31N20D | Isc N-Channel MOSFET Transistor 文件：300.29 Kbytes Page：2 Pages | ISC 无锡固电 | | |
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A ) Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | |
IRFSL31N20D产品属性
- 类型
描述
- 型号
IRFSL31N20D
- 功能描述
MOSFET N-CH 200V 31A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
2447 |
TO-262 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
25+23+ |
TO-262 |
26992 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
05+ |
原厂原装 |
7351 |
只做全新原装真实现货供应 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+24 |
TO-262 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
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2020-11-23
DdatasheetPDF页码索引
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