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IRFS31N20DPBF价格
参考价格：￥4.1055
型号：IRFS31N20DPBF 品牌：International 备注：这里有IRFS31N20DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFS31N20DPBF批发/采购报价，IRFS31N20DPBF行情走势销售排行榜，IRFS31N20DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFS31N20DPBF | THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 |   | |
IRFS31N20DPBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082廓 , ID = 31A ) Applications High Frequency DC-DC converters Lead-Free Benefits Low Gate to Drain to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | |
IRFS31N20DPBF | High Frequency DC-DC converters 文件：296.29 Kbytes Page：12 Pages | IRF | | |
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSSto Simplify Design, Fully Characterized Avalanche Voltage and Current | IRF | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | | ||
THINKI 40A,200V Matured Planar N-Channel Power MOSFETs Features • 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V • Low gate charge ( typical 154 nC) • Low Crss ( typical 101 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating | THINKISEMI 思祁半导体 | |
IRFS31N20DPBF产品属性
- 类型
描述
- 型号
IRFS31N20DPBF
- 功能描述
MOSFET 200V SINGLE N-CH 82mOhms 70nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3831 |
原装现货,当天可交货,原型号开票 |
|||
IR |
17+ |
TO263-5 |
22 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
D2PACK |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
05+ |
TO-263 |
26 |
深圳原装进口无铅现货 |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
IR |
23+24 |
D2-PAK |
56983 |
原装正品,原盘原标,提供BOM一站式配单 |
|||
IR |
21+ |
TO-263 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
25+23+ |
TO-263 |
27449 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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IRFS31N20DPBF规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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