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位置：首页 > IC中文资料第2129页 > IRF9Z34

IRF9Z34价格

参考价格：￥19.4283

型号：IRF9Z34 品牌：Vishay 备注：这里有IRF9Z34多少钱，2024年最近7天走势，今日出价，今日竞价，IRF9Z34批发/采购报价，IRF9Z34行情走势销售排行榜，IRF9Z34报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF9Z34

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF9Z34

iscN-ChannelMOSFETTransistor

文件：280.83 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF9Z34L

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34LPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34LPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34N

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NL

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NLPBF

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NPBF

HEXFET짰POWERMOSFET

HEXFET®PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NS

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NS

PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NSL

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NSPBF

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NSTRRPBF

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34S

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34S

PowerMOSFET

FEATURES •Advancedprocesstechnology •Surfacemount(IRF9Z34S,SiHF9Z34S) •175°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34S_V01

PowerMOSFET

FEATURES •Advancedprocesstechnology •Surfacemount(IRF9Z34S,SiHF9Z34S) •175°Coperatingtemperature •Fastswitching •P-channel •Fullyavalancherated •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34SPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34STRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34STRR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34N

P-ChannelMOSFETTransistor

文件：335.54 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF9Z34N

AdvancedPlanarTechnology

文件：1.07034 Mbytes Page：10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF9Z34NL

AdvancedProcessTechnology

文件：1.19237 Mbytes Page：10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF9Z34NL

iscP-ChannelMOSFETTransistor

文件：273.72 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF9Z34NPBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：246.05 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34NS

P-Channel60V(D-S)MOSFET

文件：931.22 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF9Z34NS

AdvancedProcessTechnology

文件：1.07424 Mbytes Page：10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF9Z34NS

iscP-ChannelMOSFETTransistor

文件：298.08 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF9Z34NSPBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：1.10846 Mbytes Page：11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34PBF

HEXFET짰PowerMOSFET

文件：3.51124 Mbytes Page：7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF9Z34SPBF

PowerMOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34STRLPBFA

PowerMOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF9Z34STRRPBFA

PowerMOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
AUIRF9Z34N

AUTOMOTIVEGRADEAdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
AUIRF9Z34N

AdvancedPlanarTechnology

Features •AdvancedPlanarTechnology •P-ChannelMOSFET •DynamicdV/dTRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated •RepetitiveAvalancheAlloweduptoTjmax •Lead-Free,RoHSCompliant •AutomotiveQualified*

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
F9Z34NS

AdvancedProcessTechnology

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
GEF9Z34N

MinisizeofDiscretesemiconductorelements

文件：468.13 Kbytes Page：10 Pages

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
IIRF9Z34N

P-ChannelMOSFETTransistor

文件：335.54 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRF9Z34产品属性

  • 类型

    描述

  • 型号

    IRF9Z34

  • 功能描述

    MOSFET P-Chan 60V 18 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF9Z34供应商更多...

更新时间：2024-4-30 13:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
易创佳业科技（深圳）有限公司
IRF9Z34NL
Infineon Technologies
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品，支持实单
询价
深圳市汇创佳电子科技有限公司
IRF9Z34NSTRLPBF
INFINEON TECHNOLOGIES/IR
22+
TO263
4258
原装正品 价格优势
询价
深圳市百诺芯科技有限公司
IRF9Z34NSPBF
IR
23+
TO-263
2142
原装正品代理渠道价格优势
询价
深圳市汇莱威科技有限公司
IRF9Z34STRLPBF
VISHAY
TO-263
68900
原包原标签100%进口原装常备现货!
询价
深圳市美思瑞电子科技有限公司
IRF9Z34STRLPBF
SILICONIXVISHAY
22+
N/A
12245
现货,原厂原装假一罚十!
询价
深圳市亿顺芯科技有限公司
IRF9Z34NSTRLPBF
INFINEON
2022+
TO263-2
57550
询价
深圳市近平电子有限公司
IRF9Z34NPBF
IR
2010+
TO-220
6000
绝对原装自己现货
询价
深圳市新力诚科技有限公司
IRF9Z34N
原厂
2020+
TO-220
20000
公司代理品牌,原装现货超低价清仓!
询价
深圳市芯连胜科技有限公司
IRF9Z34NPBF
Infineon
20+
TO-220AB
5328
原装正品现货
询价
深圳市科翼源电子有限公司
IRF9Z34SPBF
Vishay
23+
TO263
2560
原厂原装正品
询价

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