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IRF9Z34S中文资料
IRF9Z34S数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z34S/SiHF9Z34S)
• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
IRF9Z34S产品属性
- 类型
描述
- 型号
IRF9Z34S
- 功能描述
MOSFET P-Chan 60V 18 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
原装 |
32360 |
VISHAY/威世全新特价IRF9Z34SPBF即刻询购立享优惠#长期有货 |
|||
VISHAY |
15+ |
原厂原装 |
30250 |
进口原装现货假一赔十 |
|||
VISHAY |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
VIHSAY |
24+ |
TO-263 |
400 |
只做原厂渠道 可追溯货源 |
|||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
IR |
2021+ |
SOT263 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
24+ |
TO-263 |
501341 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
IRF9Z34STRLPBF 价格
参考价格:¥3.1969
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Datasheet数据表PDF页码索引
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