Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Surface Mount

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes Page：10 Pages

P-Channel MOSFET Transistor

文件：335.54 Kbytes Page：2 Pages