Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

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AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

Advanced Process Technology

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Mini size of Discrete semiconductor elements

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P-Channel MOSFET Transistor

文件：335.54 Kbytes Page：2 Pages