IRF9Z34S价格

参考价格:¥3.2642

型号:IRF9Z34SPBF 品牌:Vishay 备注:这里有IRF9Z34S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF9Z34S批发/采购报价,IRF9Z34S行情走势销售排行榜,IRF9Z34S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF9Z34S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRF9Z34S

Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF9Z34S

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世威世科技公司

IRF9Z34S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世威世科技公司

Surface Mount

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

KERSEMI

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

Mini size of Discrete semiconductor elements

文件:468.13 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET Transistor

文件:335.54 Kbytes Page:2 Pages

ISC

无锡固电

IRF9Z34S产品属性

  • 类型

    描述

  • 型号

    IRF9Z34S

  • 功能描述

    MOSFET P-Chan 60V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-3 12:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+24
TO-263
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
原厂原包
24+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
VISHAY/威世
25+
原装
32360
VISHAY/威世全新特价IRF9Z34SPBF即刻询购立享优惠#长期有货
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
VIHSAY
24+
TO-263
400
只做原厂渠道 可追溯货源
IR
25+23+
TO-263
27673
绝对原装正品全新进口深圳现货
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
IR
23+
TO-263
50000
全新原装正品现货,支持订货

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