IRF9Z34S价格

参考价格:¥3.2642

型号:IRF9Z34SPBF 品牌:Vishay 备注:这里有IRF9Z34S多少钱,2026年最近7天走势,今日出价,今日竞价,IRF9Z34S批发/采购报价,IRF9Z34S行情走势销售排行榜,IRF9Z34S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF9Z34S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

IRF9Z34S

Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

IRF9Z34S

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世威世科技公司

IRF9Z34S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世威世科技公司

Surface Mount

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件:204.41 Kbytes Page:9 Pages

VishayVishay Siliconix

威世威世科技公司

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

KERSEMI

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

Mini size of Discrete semiconductor elements

文件:468.13 Kbytes Page:10 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET Transistor

文件:335.54 Kbytes Page:2 Pages

ISC

无锡固电

IRF9Z34S产品属性

  • 类型

    描述

  • 型号

    IRF9Z34S

  • 功能描述

    MOSFET P-Chan 60V 18 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-5 21:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
01+
SOT263
172
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
25+
原装
32360
VISHAY/威世全新特价IRF9Z34SPBF即刻询购立享优惠#长期有货
SILICONIXVISHAY
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IR
25+
SOT-263
4500
全新原装、诚信经营、公司现货销售
VISHAY
D2PAK-3
56520
一级代理 原装正品假一罚十价格优势长期供货
25+
145
公司优势库存 热卖中!
IR
23+
NA
407
专做原装正品,假一罚百!
IR
25+
SOT263
30000
代理全新原装现货,价格优势
IR
26+
LL34
86720
全新原装正品价格最实惠 假一赔百
IR
25+23+
TO-263
37908
绝对原装正品全新进口深圳现货

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