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位置：首页 > IC中文资料第3328页 > IRF9Z14

IRF9Z14价格

参考价格：￥5.0935

型号：IRF9Z14LPBF 品牌：Vishay 备注：这里有IRF9Z14多少钱，2025年最近7天走势，今日出价，今日竞价，IRF9Z14批发/采购报价，IRF9Z14行情走势销售排行榜，IRF9Z14报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF9Z14

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

IRF

IRF9Z14

Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

VishayVishay Siliconix

威世科技

IRF9Z14

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.7A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF9Z14

Power MOSFET

VishayVishay Siliconix

威世科技

IRF9Z14

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Infineon

英飞凌

IRF9Z14

Power MOSFET

文件：277.86 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z14

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z14

isc N-Channel MOSFET Transistor

文件：270.13 Kbytes Page：2 Pages

ISC

无锡固电

IRF9Z14L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14L

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

VishayVishay Siliconix

威世科技

IRF9Z14LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14S

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF9Z14S

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

VishayVishay Siliconix

威世科技

IRF9Z14S_V01

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

VishayVishay Siliconix

威世科技

IRF9Z14SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14STRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技

IRF9Z14_17

Power MOSFET

文件：277.86 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

IRF9Z14_V01

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z14LPBF

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

IRF9Z14PBF

P-Channel 60-V (D-S) MOSFET

文件：1.64611 Mbytes Page：7 Pages

VBSEMI

微碧半导体

IRF9Z14PBF

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z14PBF

HEXFET Power MOSFET ( VDSS = -60V , RDS(on) = 0.50廓 , ID = -6.7A )

文件：257.45 Kbytes Page：8 Pages

IRF

IRF9Z14PBF

MOSFET P-CH-60V HEXFET MOSFET

VishayVishay Siliconix

威世科技

IRF9Z14PBF-BE3

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

IRF9Z14SPBF

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

IRF9Z14STRLPBFA

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

IRF9Z14STRRPBF

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

VishayVishay Siliconix

威世科技

IRF9Z14产品属性

  • 类型

    描述

  • 型号

    IRF9Z14

  • 功能描述

    MOSFET P-Chan 60V 6.7 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF9Z14供应商更多...

更新时间：2025-9-27 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市一线半导体有限公司
IRF9Z14
IR
24+
TO-220
499
询价
深圳市高捷芯城科技有限公司
IRF9Z14SPBF
VISHAY(威世)
24+
TO-263
7828
支持大陆交货,美金交易。原装现货库存。
询价
深圳市昌和盛利电子有限公司
IRF9Z14
IR
23+
TO-220
9896
询价
深圳市汇莱威科技有限公司
IRF9Z14S
IR
24+
TO-263
501338
免费送样原盒原包现货一手渠道联系
询价
瀚佳科技(深圳)有限公司
IRF9Z14
IR
24+
TO220
32650
一级代理/放心采购
询价
易创佳业科技（深圳）有限公司
IRF9Z14
Vishay Siliconix
23+
TO2203
9000
原装正品，支持实单
询价
深圳市坤融电子科技有限公司
IRF9Z14PBF
IR
24+
TO-220
4000
原装原厂代理 可免费送样品
询价
天津市博通航睿技术有限公司
IRF9Z14
IR
23+
TO-220
7000
询价
深圳市科达星科技有限公司
IRF9Z14
IR
24+
TO-220AB
27500
原装正品,价格最低!
询价
深圳市河锋鑫科技有限公司
IRF9Z14S
IR
17+
D2-PAK
31518
原装正品 可含税交易
询价

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IRF9Z14规格书下载地址

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    深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生

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