Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.7A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

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Power MOSFET

文件：277.86 Kbytes Page：9 Pages

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

Power MOSFET

FEATURES • Advanced process technology • Surface-mount (IRF9Z14S, SiHF9Z14S) • Low-profile through-hole (IRF9Z14L, SiHF9Z14L) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

Power MOSFET

文件：277.86 Kbytes Page：9 Pages

Power MOSFET

文件：158.97 Kbytes Page：8 Pages

Power MOSFET

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MOSFET P-CH-60V HEXFET MOSFET

P-Channel 60-V (D-S) MOSFET

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Power MOSFET

文件：158.97 Kbytes Page：8 Pages

HEXFET Power MOSFET ( VDSS = -60V , RDS(on) = 0.50廓 , ID = -6.7A )

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Power MOSFET

文件：158.97 Kbytes Page：8 Pages

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

Power MOSFET

文件：229.92 Kbytes Page：10 Pages

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.362 Ω (Typ.)

Advanced Power MOSFET

BVDSS = -60 V RDS(on) = 0.5Ω ID = -6.7 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175℃ Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS

HEXFET-R POWER MOSFET

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