Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175°C Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.362 Ω (Typ.)

P-Channel 60-V (D-S) MOSFET

文件：928.45 Kbytes Page：7 Pages

isc P-Channel MOSFET Transistor

文件：271.65 Kbytes Page：2 Pages

Advanced Power MOSFET

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Power MOSFET

BVDSS = -60 V RDS(on) = 0.5Ω ID = -6.7 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175℃ Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS

HEXFET-R POWER MOSFET

文件：184 Kbytes Page：6 Pages