Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

HEXFET-R POWER MOSFET

HEXFET-R POWER MOSFET

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Power MOSFET

文件：1.52458 Mbytes Page：8 Pages

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see

MOSFET P-CH-60V HEXFET MOSFET

Power MOSFET

文件：1.52458 Mbytes Page：8 Pages

Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

Power MOSFET

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Power MOSFET

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isc N-Channel MOSFET Transistor

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