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IRF731价格
参考价格：￥1.4470
型号：IRF7311PBF 品牌：INTERNATIONAL 备注：这里有IRF731多少钱，2025年最近7天走势，今日出价，今日竞价，IRF731批发/采购报价，IRF731行情走势销售排行榜，IRF731报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF731 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
IRF731 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
IRF731 | iscN-ChannelMOSFETTransistor 文件：64.989 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF731 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | |
30V2N-ChannelEnhancementModeMOSFET GeneralDescription Theisthehighestperformancetrench 2N-chMOSFETswithextremehighcelldensity, whichprovideexcellentRDSONandgatecharge formostofthesmallpowerswitchingand loadswitchapplications.ThemeettheRoHSand Productrequirementwithfullfunctionreliabilitya | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier |  | | |
30V2N-ChannelEnhancementModeMOSFET GeneralDescription 2N-chMOSFETswithextremehighcelldensity, whichprovideexcellentRDSONandgatecharge formostofthesmallpowerswitchingand loadswitchapplications.ThemeettheRoHSand Theisthehighestperformancetrench Productrequirementwithfullfunctionreliabilitya | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
30V2N-ChannelEnhancementModeMOSFET GeneralDescription Theisthehighestperformancetrench 2N-chMOSFETswithextremehighcelldensity, whichprovideexcellentRDSONandgatecharge formostofthesmallpowerswitchingand loadswitchapplications.ThemeettheRoHSand Productrequirementwithfullfunctionreliabilitya | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
DualNChannelMOSFET Features VDs(V=30V RpsoN) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
HEXFETPOWERMOSFET HEXFETPowerMOSFET | IRF International Rectifier | | | |
DualNChannelMOSFET Features VDs(V=30V RpsoN) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea175° | IRF International Rectifier | | | |
HEXFETPOWERMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRF International Rectifier | | | |
DualP-ChannelMOSFET Features ®Vbs(v)=-30V ®Roson) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
-30VPP-ChannelEnhancementModeMOSFET GENERALFEATURES ●VDS=-30Vb=-8A ●ROS(ON) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 |  | | |
DualP-ChannelMOSFET Features Vs(v)=-30V Rpson) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
DualP-ChannelMOSFET Features ®Vbs(v)=-30V ®Roson) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
DualP-ChannelMOSFET Features Vs(v)=-30V Rpson) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
-30VPP-ChannelEnhancementModeMOSFET GENERALFEATURES ●VDS=-30Vb=-8A ●ROS(ON) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
N-ChannelandP-ChannelEnhancementModePowerMOSFET Features •N-Channel:30V,10A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 |  | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
DualNPChannelMOSFET Features N-Ch: Vos(v)=30V Rosoy(on) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
DualNPChannelMOSFET Features N-Ch: eVos(v)=30V ®Rosony) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
DualNPChannelMOSFET Features N-Ch: eVos(v)=30V ®Rosony) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
DualNPChannelMOSFET Features N-Ch: Vos(v)=30V Rosoy(on) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
GenarafionVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | | | |
UltraLowOn-Resistance 文件：677.73 Kbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
GENERATIONVTECHNOLOGY 文件：1.97878 Mbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：1.97878 Mbytes Page：7 Pages | IRF International Rectifier | | | |
DualN-Channel20-V(D-S)MOSFET 文件：1.01683 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
GENERATIONVTECHNOLOGY 文件：210.75 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：210.74 Kbytes Page：7 Pages | IRF International Rectifier | | | |
HEXFETPowerMOSFET 文件：205.25 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：210.75 Kbytes Page：7 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：210.58 Kbytes Page：7 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：210.58 Kbytes Page：7 Pages | IRF International Rectifier | | | |
HEXFETPowerMOSFET 文件：237.86 Kbytes Page：7 Pages | IRF International Rectifier | | | |
DualN-Channel30-V(D-S)MOSFET 文件：1.06814 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
DualN-Channel30-V(D-S)MOSFET 文件：1.06806 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
GenerationVTechnology 文件：210.74 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：201.49 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GenerationVTechnology,UltraLowOn-Resistance 文件：201.49 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：201.49 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：201.49 Kbytes Page：7 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：223.02 Kbytes Page：9 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：201.49 Kbytes Page：7 Pages | IRF International Rectifier | | | |
DualP-Channel30-V(D-S)MOSFET 文件：1.10117 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
GenerationVTechnology 文件：231.25 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GenerationVTechnology 文件：209.43 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：209.43 Kbytes Page：7 Pages | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET 文件：203.91 Kbytes Page：7 Pages | IRF International Rectifier | | | |
GENERATIONVTECHNOLOGY 文件：209.43 Kbytes Page：7 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：208.91 Kbytes Page：7 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：208.91 Kbytes Page：7 Pages | IRF International Rectifier | | | |
HEXFETPowerMOSFET 文件：235.22 Kbytes Page：7 Pages | IRF International Rectifier | | |
IRF731产品属性
- 类型
描述
- 型号
IRF731
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Motorola Inc
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY MOSFET TO-220AB N-CH350V 5.5A 75W GDS*SS
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
IR |
2010 |
SOP8 |
2 |
全新原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
NA |
9990 |
只有原装 |
|||
IR |
23+ |
SOP-8 |
50000 |
原装正品 支持实单 |
|||
IR |
24+ |
SOP-8 |
8540 |
保证进口原装现货假一赔十 |
|||
IR |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
|||
IR |
21+ |
SOP |
57 |
原装现货假一赔十 |
|||
IR |
24+ |
SOP-8 |
12070 |
原装现货假一赔十 |
|||
IRF |
22+ |
SOP |
12245 |
现货,原厂原装假一罚十! |
|||
Infineon/英飞凌 |
24+ |
SOP-8_150mil |
6000 |
全新原装深圳仓库现货有单必成 |
IRF731芯片相关品牌
IRF731规格书下载地址
IRF731参数引脚图相关
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- IRF7319PBF
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- IRF7317TRPBF
- IRF7317PBF
- IRF7317
- IRF7316TRPBF
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- IRF7316HR
- IRF7316GTRPBF
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- IRF7314PBF
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- IRF7313TRPBF
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- IRF7311TRPBF
- IRF7311PBF
- IRF7311
- IRF730SPBF
- IRF730S
- IRF730PBF
- IRF730F
- IRF730BPBF
- IRF730B
- IRF730ASPBF
- IRF730APBF
- IRF730A
- IRF7309TRPBF-CUTTAPE
- IRF7309TRPBF
- IRF7309PBF
- IRF7309
- IRF7307TRPBF
- IRF7307PBF
- IRF7307
- IRF7306TRPBF
- IRF7306TR
- IRF7306PBF
- IRF7306
- IRF7304TRPBF
- IRF7304PBF
- IRF7304
- IRF7303TRPBF-CUTTAPE
- IRF7303TRPBF
- IRF7303TR-CUTTAPE
- IRF7303PBF
- IRF7303
- IRF7301
- IRF730
- IRF7241
- IRF7240
- IRF7233
- IRF723
- IRF7220
- IRF722
- IRF7210
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2019-4-25
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