N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

isc N-Channel MOSFET Transistor

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SEMICONDUCTORS

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Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

Dual N Channel MOSFET

Features VDs(V=30V RpsoN)

HEXFET POWER MOSFET

HEXFET Power MOSFET

Dual N Channel MOSFET

Features VDs(V=30V RpsoN)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°

HEXFET POWER MOSFET

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Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

N-Channel and P-Channel Enhancement Mode Power MOSFET

Features • N-Channel: 30V, 10A RDS(ON)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

GenarafionV Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Ultra Low On-Resistance

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GENERATION V TECHNOLOGY

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GENERATION V TECHNOLOGY

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Dual N-Channel 20-V (D-S) MOSFET

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采用 SO-8 封装的 30V 双 N 通道 HEXFET 功率 MOSFET

GENERATION V TECHNOLOGY

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Generation V Technology

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HEXFET Power MOSFET

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GENERATION V TECHNOLOGY

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Industry-standard pinout SO-8 Package

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30V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

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HEXFET Power MOSFET

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Dual N-Channel 30-V (D-S) MOSFET

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Dual N-Channel 30-V (D-S) MOSFET

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Generation V Technology

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GENERATION V TECHNOLOGY

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Generation V Technology, Ultra Low On-Resistance

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Generation V Technology

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GENERATION V TECHNOLOGY

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Advanced Process Technology

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Generation V Technology

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Dual P-Channel 30-V (D-S) MOSFET

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Generation V Technology

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GENERATION V TECHNOLOGY

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Generation V Technology

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HEXFET짰Power MOSFET

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GENERATION V TECHNOLOGY

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