General Description

2N-ch MOSFETs with extreme high cell density,

which provide excellent RDSON and gate charge

for most of the small power switching and

load switch applications. The meet the RoHS and

The is the highest performance trench

Product requirement with full function reliability approved.

General Features

VDS = 30V ID = 9A

RDS(ON) < 13mΩ @ VGS=10 V

RDS(ON) < 18mΩ @ VGS=4.5V