丝印代码：IRF7311；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

丝印代码：IRF7311；30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

丝印代码：IRF7311；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

采用 SO-8 封装的 20V 双 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道 MOSFET;

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Ultra Low On-Resistance

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HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

GENERATION V TECHNOLOGY

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GENERATION V TECHNOLOGY

文件：1.97878 Mbytes Page：7 Pages

Dual N-Channel 20-V (D-S) MOSFET

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T-1 Subminiature Lamps

T-1¼ Subminiature Lamps

PHOTOMULTIPLIER TUBES

For Vacuum Ultraviolet Light Detection Cs-Te (R7311), Cs-I (R7511) Photocathode, MgF2 Window, 13mm (1/2 Inch) Diameter, 9-stage, Side-on Type FEATURES ● Sensitivity in the Vacuum Ultraviolet Region R7311.............................................................115 to 320nm R7511....

SERIAL BUS CONTROLLED AUDIO PROCESSOR

DESCRIPTION The TDA7311 is a volume, tone (bass and treble) and fader (front/rear) processor for high quality audio applicationsin car radio and Hi-Fi systems. ■ INPUT MULTIPLEXER – TWO STEREO DIFFERENTIAL INPUTS – TWO STEREO SINGLE ENDED INPUTS – ONE MONO DIFFERENTIAL INPUT ■ IN

ANALOG FUNCTION SWITCH

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ANALOG FUNCTION SWITCH

文件：196.75 Kbytes Page：5 Pages