HEXFET POWER MOSFET

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-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

HEXFET Power MOSFET, 采用 SO-8 封装

Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

-30V PP-Channel Enhancement Mode MOSFET

GENERAL FEATURES ● VDS = -30V b = -8 A ● ROS(ON)

Generation V Technology

文件：231.25 Kbytes Page：7 Pages

HEXFET짰Power MOSFET

文件：203.91 Kbytes Page：7 Pages

Generation V Technology

文件：209.43 Kbytes Page：7 Pages

GENERATION V TECHNOLOGY

文件：209.43 Kbytes Page：7 Pages

GENERATION V TECHNOLOGY

文件：209.43 Kbytes Page：7 Pages

Industry-standard pinout SO-8 Package

文件：208.91 Kbytes Page：7 Pages

-30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：208.91 Kbytes Page：7 Pages

HEXFET Power MOSFET

文件：235.22 Kbytes Page：7 Pages

HEXFET Power MOSFET

Generation V Technology

文件：209.43 Kbytes Page：7 Pages

SPI/I2C Compatible, 10-Bit Digital Temperature Sensor and Quad Voltage Output 12/10/8-Bit DAC

GENERAL DESCRIPTION The ADT7316/ADT7317/ADT73181combine a 10-bit temperature-to-digital converter and a quad 12-/10-/8-bit DAC, respectively, in a 16-lead QSOP. This includes a band gap temperature sensor and a 10-bit ADC to monitor and digitize the temperature reading to a resolution of 0.25°C.

Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages

TERMINAL LUGS

文件：558.58 Kbytes Page：1 Pages

500KHz, 16V, 3A Synchronous Step-Down Converter

文件：560.6 Kbytes Page：6 Pages

500KHz, 16V, 3A Synchronous Step-Down Converter

文件：560.6 Kbytes Page：6 Pages