HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

采用 SO-8 封装的 20V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

N-Channel and P-Channel Enhancement Mode Power MOSFET

Features • N-Channel: 30V, 10A RDS(ON)

HEXFET짰 Power MOSFET

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GENERATION V TECHNOLOGY

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丝印代码：F7101；

Generartion V Technology

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GENERATION V TECHNOLOGY

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N- and P-Channel 30 V (D-S) MOSFET

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Generation V Technology

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SPI/I2C Compatible, 10-Bit Digital Temperature Sensor and Quad Voltage Output 12/10/8-Bit DAC

GENERAL DESCRIPTION The ADT7316/ADT7317/ADT73181combine a 10-bit temperature-to-digital converter and a quad 12-/10-/8-bit DAC, respectively, in a 16-lead QSOP. This includes a band gap temperature sensor and a 10-bit ADC to monitor and digitize the temperature reading to a resolution of 0.25°C.

10/100 Base-T Magnetic Module

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LAN 10/100 BASE-T Magnetic Module

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Wire-Thread-Inserts

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TERMINAL LUGS

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