Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

GenarafionV Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

N- and P-Channel 30 V (D-S) MOSFET

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HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C j

AUTOMOTIVE GRADE

Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C j

LOCKWASHER TERMINAL LUG

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Female Pin Connectors

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Wire-Thread-Inserts

文件：102.37 Kbytes Page：3 Pages