您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第365页 > IRF640N

IRF640N价格

参考价格：￥5.7412

型号：IRF640NLPBF 品牌：INTERNATIONAL 备注：这里有IRF640N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF640N批发/采购报价，IRF640N行情走势销售排行榜，IRF640N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF640N

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640N

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640N

N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤150mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

ISC

无锡固电

IRF640N

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640N

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

ONSEMI

安森美半导体

IRF640N

采用 TO-220 封装的 200V 单 N 沟道 MOSFET

Infineon

英飞凌

IRF640N

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

无锡固电

IRF640N

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640N

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NL

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NL

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NL

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

ISC

无锡固电

IRF640NL

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640NLPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640NLPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640NS

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640NS

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NS

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NSPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NSPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640N_04

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640N_18

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

无锡固电

IRF640NL

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NL

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF

场效应管

hxymos

华轩阳电子

IRF640NPBF_15

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NS

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NS

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NSPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NSPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NSRPBF

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NSTRLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

640

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

640

3M??Scotch짰 Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

3M

640

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

Littelfuse

力特

640

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

OSCILENT

640A

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF640N产品属性

  • 类型

    描述

  • 型号

    IRF640N

  • 功能描述

    MOSFET N-CH 200V 18A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF640N供应商更多...

更新时间：2025-9-23 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市卓越微芯电子有限公司
IRF640NSTRLPBF
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市金芯阳科技有限公司
IRF640N
ST
24+
SOP14
10000
原装正品价格优势!欢迎询价QQ:385913858TEL:15
询价
深圳市凌旭科技有限公司
IRF640NPBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
富凯科技(深圳）有限公司
IRF640NPBF
IR
24+
TO220
5650
询价
深圳深宇韬电子科技有限公司
IRF640NPBF
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
深圳市河锋鑫科技有限公司
IRF640NPBF
IR
1616+
TO-220
10
只做原装,可开13个点税票
询价
深圳市昌和盛利电子有限公司
IRF640NPBF
IRE
23+
T0-220
19526
原装正品价格优惠,长期优势供应
询价
深圳市宏世佳电子科技有限公司
IRF640N
IR
23+
TO-220
3500
全新原装,公司现货销售
询价
深圳市宇集芯电子有限公司
IRF640N
IR/VISHAY
24+
1TO-220
90000
一级代理商进口原装现货、价格合理
询价
深圳市亿智腾科技有限公司
IRF640N
IR
24+
TO-220
6430
原装现货/欢迎来电咨询
询价

IRF640N芯片相关品牌

IRF640N规格书下载地址

IRF640N参数引脚图相关

IRF640N数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示