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位置：首页 > IC中文资料第365页 > IRF640N

IRF640N价格

参考价格：￥5.7412

型号：IRF640NLPBF 品牌：INTERNATIONAL 备注：这里有IRF640N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF640N批发/采购报价，IRF640N行情走势销售排行榜，IRF640N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF640N

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640N

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640N

N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤150mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

ISC

无锡固电

IRF640N

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640N

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640N

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

无锡固电

IRF640N

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NL

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NL

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NL

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640NL

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

ISC

无锡固电

IRF640NLPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NLPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640NPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NS

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NS

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF640NS

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640NSPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NSPBF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

IRF640N_04

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640N_18

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

无锡固电

IRF640NL

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NL

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NPBF_15

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NS

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NS

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

IRF640NSPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NSPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

IRF640NSRPBF

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640NSTRLPBF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

640

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

640

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

OSCILENT

640

3M??Scotch짰 Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

3M

640

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

Littelfuse

力特

640A

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages

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IRF640N产品属性

  • 类型

    描述

  • 型号

    IRF640N

  • 功能描述

    MOSFET N-CH 200V 18A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF640N供应商更多...

更新时间：2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRF640NSTRRPBF
Infineon(英飞凌)
24+
D2PAK
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
IRF640NL
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市凌旭科技有限公司
IRF640N
IR
2016+
TO220
2654
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
IRF640NPBF
INFINEON
23+
K-B
110030
只有原装,请来电咨询
询价
深圳市纳立科技有限公司
IRF640NSTRLPBF
三年内
1983
只做原装正品
询价
深圳市金芯世纪电子有限公司
IRF640NSTRL
IR/VISHAY
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
IRF640NSPBF
IR
25+
TO262
54648
百分百原装现货 实单必成 欢迎询价
询价
中天科工半导体（深圳）有限公司
IRF640N
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
深圳市星辰微电科技有限公司
IRF640N
Infineon
23+
TO220
15500
英飞凌优势渠道全系列在售
询价
深圳市华睿芯科技有限公司
IRF640NPBF
24+
TO-220
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价

IRF640N芯片相关品牌

IRF640N规格书下载地址

IRF640N参数引脚图相关

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