Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤150mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

采用 TO-220 封装的 200V 单 N 沟道 MOSFET

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

场效应管

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

3M??Scotch짰 Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages