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IRF640NLPBF中文资料
IRF640NLPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
IRF640NLPBF产品属性
- 类型
描述
- 型号
IRF640NLPBF
- 功能描述
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
500 |
只做原厂渠道 可追溯货源 |
|||
Infineon(英飞凌) |
24+ |
TO-262 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
TO-262-3 |
271 |
||||
IR |
23+ |
TO-262 |
20000 |
原装正品,假一罚十 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
2018+ |
TO-262 |
26976 |
代理原装现货/特价热卖! |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR原装 |
24+ |
TO-262 |
30980 |
原装现货/放心购买 |
IRF640NLPBF 价格
参考价格：￥5.7412
IRF640NLPBF 资料下载更多...
IRF640NLPBF 芯片相关型号
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