IRF640NS价格

参考价格:¥1.8172

型号:IRF640NSPBF 品牌:INTERNATIONAL 备注:这里有IRF640NS多少钱,2025年最近7天走势,今日出价,今日竞价,IRF640NS批发/采购报价,IRF640NS行情走势销售排行榜,IRF640NS报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF640NS

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

Fairchild

仙童半导体

IRF640NS

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640NS

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640NS

Advanced Process Technology

文件:248.99 Kbytes Page:12 Pages

IRF

IRF640NS

HEXFET Power MOSFET

文件:240.04 Kbytes Page:11 Pages

IRF

IRF640NS

200V N-Channel Power MOSFET

ETC

知名厂家

IRF640NS

N 沟道功率 MOSFET

Infineon

英飞凌

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

Advanced Process Technology

文件:341.59 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:341.59 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:248.99 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:341.59 Kbytes Page:11 Pages

IRF

ROD SEALS

DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

Quartz Stability

文件:141.46 Kbytes Page:3 Pages

OSCILENT

3M??Scotch짰 Transparent Film Tape 640

文件:567.23 Kbytes Page:6 Pages

3M

MINIATURE FUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

Littelfuse

力特

PULSE TRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF640NS产品属性

  • 类型

    描述

  • 型号

    IRF640NS

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N D2-PAK

更新时间:2025-11-18 11:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
15000
原装正品现货
INFINEON
23+
K-B
18430
只有原装,请来电咨询
IR
24+
TO-263
27500
原装正品,价格最低!
IR
2450+
TO-263
6540
只做原厂原装正品终端客户免费申请样品
IR
12+
D2PAK
2500
原装现货/特价
IR/国际整流器
21+
TO-263-2
10000
只做原装,质量保证
IR
22+
TO-263
12245
现货,原厂原装假一罚十!
INFINEON/英飞凌
22+
TO-263
18500
原装正品支持实单
Infineon
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
Infineon/英飞凌
24+
D2PAK
6000
全新原装深圳仓库现货有单必成

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