IRF620价格

参考价格:¥7.8586

型号:IRF620 品牌:Vishay 备注:这里有IRF620多少钱,2024年最近7天走势,今日出价,今日竞价,IRF620批发/采购报价,IRF620行情走势销售排行榜,IRF620报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF620

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
IRF620

N-ChannelPowerMOSFETs,7A,150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF620

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF620

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

TEL

TRANSYS Electronics Limited

TEL
IRF620

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRF620

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF620

PowerMOSFET

TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220ABcontributetoitswideacceptancethroughouttheindustry. FEATURES •DynamicdV/dtRating

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF620

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay
IRF620

COLOURTELEVISION

文件:6.0518 Mbytes Page:70 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
IRF620

N-ChannelPowerMosfets

文件:154.1 Kbytes Page:5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF620

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF620

PowerMOSFET

文件:107.31 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=0.626W(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications, suchasswitchingpowersupplies,ACandDC motorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

TEL

TRANSYS Electronics Limited

TEL

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

文件:252.69 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

BatteryoperatedDCmotorinverterMOSFET

文件:252.69 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:252.69 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:43.05 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:173.94 Kbytes Page:2 Pages

TEL

TRANSYS Electronics Limited

TEL

PowerMOSFET

文件:107.31 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PowerMOSFET

文件:141.7 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.5 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.80廓,ID=5.2A)

文件:1.82495 Mbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:141.7 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.5 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.5 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

SuperSOT??80VNPNSILICONLOWSATURATIONTRANSISTOR

文件:240.96 Kbytes Page:6 Pages

Zetex

Zetex Semiconductors

Zetex

DCaxialfans

文件:375.69 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:505.68 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

LowProfile

文件:146.94 Kbytes Page:2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

DCaxialfans

文件:430.87 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

IRF620产品属性

  • 类型

    描述

  • 型号

    IRF620

  • 功能描述

    MOSFET N-Chan 200V 5.2 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-25 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-220
12000
全新原装假一赔十
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
VISHAY
23+
TO-220-3
12650
原装现货支持送检
INFINEON/英飞凌
23+
SO8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
IR
23+
PLCC
18000
VISHAY
2020+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
VISHAY(威世)
23+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
VISHAY/威世
23+
TO-220
30000
全新原装现货特价销售,欢迎来电查询
STM05
23+
TO220
9280
价格优势/原装现货/客户至上/欢迎广大客户来电查询
STM
16+
原厂封装
19800
原装现货假一罚十

IRF620芯片相关品牌

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  • RECTRON
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