N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET

5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

Power MOSFET

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. FEATURES • Dynamic dV/dt Rating

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

Power MOSFET

Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.

Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB

N-Channel Power Mosfets

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Power MOSFET

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SEMICONDUCTORS

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COLOUR TELEVISION

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Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 25 A RDS(ON)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.626W(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

Power MOSFET VDSS =200V, RDS(on) = 0.80 ohm, ID = 5.2 A

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

HEXFET

Power MOSFET

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HEXFET

Power MOSFET

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isc N-Channel MOSFET Transistor

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Power MOSFET

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Power MOSFET

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Power MOSFET

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HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80廓 , ID=5.2A )

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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