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IRF620价格
参考价格:¥7.8586
型号:IRF620 品牌:Vishay 备注:这里有IRF620多少钱,2024年最近7天走势,今日出价,今日竞价,IRF620批发/采购报价,IRF620行情走势销售排行榜,IRF620报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF620 | N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF620 | N-ChannelPowerMOSFETs,7A,150-200V N-ChannelPowerMOSFETs7A150-200V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF620 | 5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET 5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF620 | PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A | TEL TRANSYS Electronics Limited | ||
IRF620 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRF620 | iscN-ChannelMOSFETTransistor •DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF620 | PowerMOSFET TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220ABcontributetoitswideacceptancethroughouttheindustry. FEATURES •DynamicdV/dtRating | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF620 | PowerMOSFET FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | ||
IRF620 | COLOURTELEVISION 文件:6.0518 Mbytes Page:70 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | ||
IRF620 | N-ChannelPowerMosfets 文件:154.1 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF620 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF620 | PowerMOSFET 文件:107.31 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
PowerMOSFET FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=0.626W(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor •DESCRITION •Designedforhighspeedapplications, suchasswitchingpowersupplies,ACandDC motorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
VishaySiliconix DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A | TEL TRANSYS Electronics Limited | |||
HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4 | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技 | |||
VishaySiliconix DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET 文件:252.69 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
BatteryoperatedDCmotorinverterMOSFET 文件:252.69 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:252.69 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:43.05 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET 文件:173.94 Kbytes Page:2 Pages | TEL TRANSYS Electronics Limited | |||
PowerMOSFET 文件:107.31 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PowerMOSFET 文件:141.7 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:217.5 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.80廓,ID=5.2A) 文件:1.82495 Mbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:141.7 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:217.5 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:217.5 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
SuperSOT??80VNPNSILICONLOWSATURATIONTRANSISTOR 文件:240.96 Kbytes Page:6 Pages | Zetex Zetex Semiconductors | |||
DCaxialfans 文件:375.69 Kbytes Page:3 Pages | EBMPAPST ebm-papst | |||
DCaxialfans 文件:505.68 Kbytes Page:3 Pages | EBMPAPST ebm-papst | |||
LowProfile 文件:146.94 Kbytes Page:2 Pages | OSCILENT Oscilent Corporation | |||
DCaxialfans 文件:430.87 Kbytes Page:3 Pages | EBMPAPST ebm-papst |
IRF620产品属性
- 类型
描述
- 型号
IRF620
- 功能描述
MOSFET N-Chan 200V 5.2 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
12000 |
全新原装假一赔十 |
|||
INFINEON/IR |
1907+ |
NA |
4000 |
20年老字号,原装优势长期供货 |
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VISHAY |
23+ |
TO-220-3 |
12650 |
原装现货支持送检 |
|||
INFINEON/英飞凌 |
23+ |
SO8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
23+ |
PLCC |
18000 |
||||
VISHAY |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY(威世) |
23+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
23+ |
TO-220 |
30000 |
全新原装现货特价销售,欢迎来电查询 |
|||
STM05 |
23+ |
TO220 |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
STM |
16+ |
原厂封装 |
19800 |
原装现货假一罚十 |
IRF620规格书下载地址
IRF620参数引脚图相关
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- IRF630
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- IRF624SPBF
- IRF624S
- IRF624PBF
- IRF624B
- IRF624A
- IRF624
- IRF623
- IRF622
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- IRF620STRLPBF
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- IRF620S
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- IRF620PBF
- IRF620N
- IRF620B
- IRF620A
- IRF6201TRPBF
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- IRF6156
- IRF6150
- IRF614SPBF
- IRF614S
- IRF614B
- IRF614A
- IRF614
- IRF613
- IRF612
- IRF611
- IRF610STRLPBF
- IRF610SPBF
- IRF610S
- IRF610PBF
- IRF610LPBF
- IRF610L
- IRF610B
- IRF610A
- IRF6100
- IRF610
- IRF5NJ9540SCV
- IRF5NJ3315
- IRF5N60
- IRF5M5210
- IRF5852TR
- IRF5852
- IRF5851
- IRF5850TR
- IRF5850
- IRF5810
- IRF5806TRPBF
- IRF5805TRPBF
- IRF5804TRPBF
- IRF5803TRPBF
- IRF5803TR
- IRF5803D2TRPBF
- IRF5802TRPBF
- IRF5801TRPBF
- IRF5800TR
IRF620数据表相关新闻
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