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位置：首页 > IC中文资料第3431页 > IRF620

IRF620价格

参考价格：￥7.8586

型号：IRF620 品牌：Vishay 备注：这里有IRF620多少钱，2025年最近7天走势，今日出价，今日竞价，IRF620批发/采购报价，IRF620行情走势销售排行榜，IRF620报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF620

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
IRF620

N-ChannelPowerMOSFETs,7A,150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF620

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET

5.0A,200V,0.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

Intersil
IRF620

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF620

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF620

PowerMOSFET

TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220ABcontributetoitswideacceptancethroughouttheindustry. FEATURES •DynamicdV/dtRating

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF620

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620

COLOURTELEVISION

文件：6.0518 Mbytes Page：70 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
IRF620

N-ChannelPowerMosfets

文件：154.1 Kbytes Page：5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF620

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
IRF620

PowerMOSFET

文件：107.31 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF620_V01

PowerMOSFET

FEATURES •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF6201TRPBF

N-ChannelEnhancementModePowerMOSFET

Features VDS=30V,ID=25A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip
IRF620A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •LowRDS(on)=0.626W(TYP) •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF620A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.626Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF620B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF620FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.55Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
IRF620PBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRF
IRF620PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620R

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedforhighspeedapplications, suchasswitchingpowersupplies,ACandDC motorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF620S

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.80ohm,ID=5.2A

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF620S

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4

IRF

International Rectifier

IRF
IRF620S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Simpledriverequirements •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620STRLPBF

VishaySiliconix

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF6201PBF

HEXFETPowerMOSFET

文件：252.69 Kbytes Page：9 Pages

IRF

International Rectifier

IRF
IRF6201PBF_15

BatteryoperatedDCmotorinverterMOSFET

文件：252.69 Kbytes Page：9 Pages

IRF

International Rectifier

IRF
IRF6201TRPBF

HEXFETPowerMOSFET

文件：252.69 Kbytes Page：9 Pages

IRF

International Rectifier

IRF
IRF620FI

iscN-ChannelMOSFETTransistor

文件：43.05 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF620N

PowerMOSFET

文件：173.94 Kbytes Page：2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF620PBF

PowerMOSFET

文件：107.31 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF620S

PowerMOSFET

文件：141.7 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620SPBF

PowerMOSFET

文件：217.5 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620SPBF

HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.80廓,ID=5.2A)

文件：1.82495 Mbytes Page：9 Pages

IRF

International Rectifier

IRF
IRF620STRL

PowerMOSFET

文件：141.7 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620STRLPBFA

PowerMOSFET

文件：217.5 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF620STRRPBFA

PowerMOSFET

文件：217.5 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
620

SuperSOT??80VNPNSILICONLOWSATURATIONTRANSISTOR

文件：240.96 Kbytes Page：6 Pages

Zetex

Zetex Semiconductors

Zetex
620

DCaxialfans

文件：375.69 Kbytes Page：3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST
620

DCaxialfans

文件：505.68 Kbytes Page：3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST
620

LowProfile

文件：146.94 Kbytes Page：2 Pages

OSCILENT

Oscilent Corporation

OSCILENT
620

DCaxialfans

文件：430.87 Kbytes Page：3 Pages

EBMPAPSTebm-papst

依必安派特依必安派特公司

EBMPAPST

IRF620产品属性

  • 类型

    描述

  • 型号

    IRF620

  • 功能描述

    MOSFET N-Chan 200V 5.2 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF620供应商更多...

更新时间：2025-8-4 16:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市佳鑫美电子科技有限公司
IRF620
ST
24+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
深圳市恒创达实业有限公司
IRF620
SEC
17+
TO-220AB
6200
100%原装正品现货
询价
深圳市星佑电子有限公司
IRF620
IR
05+
TO-220
8000
原装进口
询价
深圳市高捷芯城科技有限公司
IRF620STRLPBF
VISHAY(威世)
24+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
询价
深圳市华斯顿科技有限公司
IRF620
SEC
25+23+
TO-220
15937
绝对原装正品全新进口深圳现货
询价
深圳市中联芯电子有限公司
IRF620PBF
VISHAY/威世
24+
TO-220
5715
只做原装 有挂有货 假一罚十
询价
深圳市福田区绿盛电子商行
IRF620
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
深圳市科翼源电子有限公司
IRF620
HAR
23+
TO-220
7500
原厂原装正品
询价
深圳市金华微盛电子有限公司
IRF620
ST
19+
TO-220
37500
询价
上海金庆电子技术有限公司
IRF620
ST
新
796
全新原装 货期两周
询价

IRF620芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

IRF620规格书下载地址

IRF620参数引脚图相关

IRF620数据表相关新闻

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