Power MOSFET

Power MOSFET VDSS =200V, RDS(on) = 0.80 ohm, ID = 5.2 A

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

Power MOSFET

Power MOSFET

HEXFET Power MOSFET

Power MOSFET

文件：141.7 Kbytes Page：8 Pages

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

文件：217.5 Kbytes Page：9 Pages

HEXFET POWER MOSFET (VDSS=200V , RDS(on)=0.80廓 , ID=5.2A )

文件：1.82495 Mbytes Page：9 Pages

Power MOSFET

文件：141.7 Kbytes Page：8 Pages

Power MOSFET

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Power MOSFET

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