位置：首页 > IC中文资料第1593页 > IRF5803D2PBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF5803D2PBF | FETKY 짰MOSFET & Schottky Diode VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V Description The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach | IRF |   | |
FETKY??MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V Description The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to ach | IRF | | ||
Ideal For Buck Regulator Applications 文件：148.89 Kbytes Page：11 Pages | IRF | | ||
Co-packaged HEXFET Power 文件：159.3 Kbytes Page：11 Pages | IRF | |
IRF5803D2PBF产品属性
- 类型
描述
- 型号
IRF5803D2PBF
- 功能描述
MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
|||
MOT |
23+ |
DIP-28 |
6500 |
全新原装假一赔十 |
|||
IR |
15+ |
SOP8 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
SOP-8 |
1200 |
大批量供应优势库存热卖 |
|||
IR |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
SOP8 |
2489 |
||||
IR |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
|||
Infineon Technologies |
23+ |
8SOIC |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
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IRF5803D2PBF规格书下载地址
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