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IRF5803D2PBF中文资料
IRF5803D2PBF数据手册规格书PDF详情
VDSS = -40V
RDS(on) = 112mΩ
Schottky Vf = 0.51V
Description
The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
● Co-packaged HEXFET® Power MOSFET and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET®
● Low VF Schottky Rectifier
● SO-8 Footprint
● Lead-Free
IRF5803D2PBF产品属性
- 类型
描述
- 型号
IRF5803D2PBF
- 功能描述
MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
INFINEON |
25+ |
SOP-8 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
SOP8 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
SOP8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
23+ |
8SOIC |
9000 |
原装正品,支持实单 |
|||
IR |
15+ |
SOP8 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
IRF5803D2PBF 资料下载更多...
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