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IRF5803D2中文资料
IRF5803D2数据手册规格书PDF详情
VDSS = -40V
RDS(on) = 112mΩ
Schottky Vf = 0.51V
Description
The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
● Co-packaged HEXFET® Power MOSFET and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET®
● Low VF Schottky Rectifier
● SO-8 Footprint
IRF5803D2产品属性
- 类型
描述
- 型号
IRF5803D2
- 功能描述
MOSFET P-CH 40V 3.4A 8-SOIC
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
FETKY™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
2023+ |
5800 |
进口原装,现货热卖 |
||||
IR |
25+ |
SOP |
32360 |
IR全新特价IRF5803D2TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
SOP8 |
52 |
只做原厂渠道 可追溯货源 |
|||
IR |
23+ |
SOP-8 |
6540 |
原厂原装正品 |
|||
IR |
2021+ |
SO-8 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
24+ |
SOP-8 |
500556 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2450+ |
SOP-8 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IOR |
25+ |
PLCC |
18000 |
原厂直接发货进口原装 |
|||
IOR |
24+ |
SOP-8P |
160 |
||||
IR |
05+ |
原厂原装 |
20048 |
只做全新原装真实现货供应 |
IRF5803D2TRPBF 价格
参考价格：￥1.9356
IRF5803D2 资料下载更多...
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