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位置：首页 > IC中文资料 > IRF510

IRF510价格

参考价格：￥3.0745

型号：IRF510 品牌：Vishay 备注：这里有IRF510多少钱，2026年最近7天走势，今日出价，今日竞价，IRF510批发/采购报价，IRF510行情走势销售排行榜，IRF510报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF510

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

仙童半导体

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

INTERSIL

IRF510

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF510

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

VISHAYVishay Siliconix

威世威世科技公司

IRF510

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

HARRIS

IRF510

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

IRF

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

Features • 5.6A, 100V • r DS(ON) = 0.540 Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to

SYC

IRF510

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

INFINEON

英飞凌

IRF510

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-Channel Enhancement-Mode Vertical DMOS Power FETs

SUTEX

IRF510

N-Channel Power Mosfets

文件：374.91 Kbytes Page：5 Pages

ARTSCHIP

IRF510

N-Channel Power MOSFETs, 5.5 A, 60-100V

ONSEMI

安森美半导体

IRF510

Repetitive Avalanche Rated

文件：111.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF510

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF510

isc N-Channel Mosfet Transistor

文件：45.3 Kbytes Page：2 Pages

ISC

无锡固电

IRF510_V01

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

VISHAYVishay Siliconix

威世威世科技公司

IRF510-513

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

仙童半导体

IRF510A

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

FAIRCHILD

仙童半导体

IRF510N

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

FAIRCHILD

仙童半导体

IRF510N

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

INTERSIL

IRF510N

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF

IRF510N

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It

VISHAYVishay Siliconix

威世威世科技公司

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

IRF

IRF510PBF

HEXFET POWER MOSFET

HEXFET POWER MOSFET

IRF

IRF510PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF510S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It

VISHAYVishay Siliconix

威世威世科技公司

IRF510S

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VISHAYVishay Siliconix

威世威世科技公司

IRF510S

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF

IRF510S_V01

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

VISHAYVishay Siliconix

威世威世科技公司

IRF510G

Trans MOSFET N-CH 100V 5.6A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF510N

HEXFET Power MOSFET

文件：331.86 Kbytes Page：9 Pages

IRF

IRF510N

Repetitive Avalanche Rated

文件：111.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF510SPBF

HEXFET Power MOSFET

文件：331.86 Kbytes Page：9 Pages

IRF

IRF510SPBF

Power MOSFET

文件：217.2 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF510STRLPBFA

Power MOSFET

文件：217.2 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF510STRRPBFA

Power MOSFET

文件：217.2 Kbytes Page：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

MAZY510

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

PANASONIC

松下

MU510

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

MOSPEC

统懋

S510

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

PANJIT

強茂

SF510

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

MOSPEC

统懋

SR510

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS

MOSPEC

统懋

IRF510产品属性

  • 类型

    描述

  • Minimum Operating Temperature：

    -55°C

  • Maximum Power Dissipation：

    43000mW

  • Maximum Operating Temperature：

    175°C

  • Maximum Gate Source Voltage：

    ±20V

  • Maximum Drain Source Voltage：

    100V

  • Maximum Continuous Drain Current：

    5.6A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

  • Category：

    Power MOSFET

IRF510供应商更多...

更新时间：2026-5-24 21:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
IRF510S
IR
2430+
TO-263
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市胜彬电子有限公司
IRF510PBF
VISHAY
22+
TO220
8000
原装正品现货假一罚十
询价
深圳市中联芯电子有限公司
IRF510PBF
VISHAY/威世
25+
TO-220
5715
只做原装 有挂有货 假一罚十
询价
深圳市赛尔通科技有限公司
IRF510PBF
VISHAY
23+
TO-220
65400
询价
深圳市金芯阳科技有限公司
IRF510PBF
VISHAY
15+
原厂原装
83650
进口原装现货假一赔十
询价
深圳市坤融电子科技有限公司
IRF510PBF
VISHAY/威世
2025+
TO220
5000
原装进口价格优 请找坤融电子!
询价
深圳市创新迹电子有限公司
IRF510
SEC
2021+
TO-220AB
9000
原装现货,随时欢迎询价
询价
柒号芯城电子商务(深圳)有限公司
IRF510PBF
VISHAY
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市斌能达电子科技有限公司
IRF510
IR
24+
TO-220
2000
全新原装深圳仓库现货有单必成
询价
深圳市勤思达科技有限公司
IRF510PBF
IR
13+
TO-220/TO-263
100000
深圳市勤思达科技有限公司主营IR系列全新原装正品,现货供应IRF510PBF,IRF510STR,正品现货供应,欢迎咨询洽谈。
询价

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IRF510规格书下载地址

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