IRF510价格

参考价格:¥3.0745

型号:IRF510 品牌:Vishay 备注:这里有IRF510多少钱,2024年最近7天走势,今日出价,今日竞价,IRF510批发/采购报价,IRF510行情走势销售排行榜,IRF510报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF510

N-ChannelPowerMOSFETs,5.5A,60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF510

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF510

4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

HARRIS

HARRIS corporation

HARRIS
IRF510

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

SUTEX

Supertex, Inc

SUTEX
IRF510

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF510

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技

Vishay
IRF510

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技

Vishay
IRF510

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRF510

iscN-ChannelMosfetTransistor

文件:45.3 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF510

RepetitiveAvalancheRated

文件:111.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF510

N-ChannelPowerMosfets

文件:374.91 Kbytes Page:5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技

Vishay

N-ChannelPowerMOSFETs,5.5A,60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技

Vishay

AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •175°COperatingTemperature •LowerLeakageCurrent:10μA(Max.)@VDS=100V •LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技

Vishay

HEXFETPOWERMOSFET

HEXFETPOWERMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=5.6A)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技

Vishay

RepetitiveAvalancheRated

文件:111.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

HEXFETPowerMOSFET

文件:331.86 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:331.86 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:217.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.2 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

ROUNDINSTRUMENTATIONHANDLES

[KEYSTONE] ROUNDINSTRUMENTATIONHANDLES FERRULES HANDLEMOUNTINGSCREWS

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

AluminumCapacitors125°C,Miniature,RadialLead

文件:90.81 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技

Vishay

LINEARANDROTARYPOSITION

文件:77.58 Kbytes Page:1 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

文件:124.92 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

LINEARANDROTARYPOSITION

文件:77.58 Kbytes Page:1 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

IRF510产品属性

  • 类型

    描述

  • 型号

    IRF510

  • 功能描述

    MOSFET N-Chan 100V 5.6 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-25 10:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC/ON
23+
原包装原封□□
15790
原装进口特价供应QQ1304306553更多详细咨询库存
VISHAY
22+
TO220
8000
原装正品现货假一罚十
Vishay Siliconix
23+
D2PAK(TO-263)
30000
晶体管-分立半导体产品-原装正品
IR
TO263
7906200
VISHAY/威世
24+
TO-220AB
7200
只做原装欢迎含税交易,假一赔十
SEC
21+
TO-220AB
6000
原装正品
INENOI
20+
SOT263
2300
全新原装,价格优势
SEC
1305+
TO-220
12000
23+
原厂封装
9888
专做原装正品,假一罚百!
SEC
17+
TO-220AB
6200
100%原装正品现货

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