Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

HEXFET POWER MOSFET

HEXFET POWER MOSFET

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS