| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF510N | 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs | INTERSIL | ||
IRF510N | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF510N | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF510N | Advanced Power MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.) | FAIRCHILD 仙童半导体 | ||
IRF510N | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A) HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A | IRF | ||
IRF510N | Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
| IRF | ||
IRF510N | Repetitive Avalanche Rated 文件:111.42 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF510N | HEXFET Power MOSFET 文件:331.86 Kbytes Page:9 Pages | IRF | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible | PANASONIC 松下 | |||
POWER RECTIFIERS(5.0A,500-1000V) Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS | MOSPEC 统懋 | |||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For | PANJIT 強茂 | |||
POWER RECTIFIERS(5.0A,500-1000V) ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS | MOSPEC 统懋 | |||
SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V) Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS | MOSPEC 统懋 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
7000 |
||||
VISHAY/威世 |
25+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
IR |
25+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
VISHAY欢迎订购 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
I |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY特价欢迎订购 |
25+23+ |
TO-220 |
20229 |
绝对原装正品全新进口深圳现货 |
|||
VBsemi |
25+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VISHAY欢迎订购 |
26+ |
TO-220 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
原装正品 |
23+ |
TO-220 |
56166 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRF510N芯片相关品牌
IRF510N规格书下载地址
IRF510N参数引脚图相关
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IRF510N数据表相关新闻
IRF520NPBF
全新原装现货 支持第三方机构验证
2022-10-19IRF5305PBF
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2022-10-19IRF3710STRLPBF 原装正品
INFINEON/英飞凌 现货100K
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2022-4-26IRF3710PBF原装现货
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2021-8-9IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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