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IRF510N

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs

INTERSIL

IRF510N

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

VISHAYVishay Siliconix

威世威世科技公司

IRF510N

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It

VISHAYVishay Siliconix

威世威世科技公司

IRF510N

Advanced Power MOSFET

FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • 175°C Operating Temperature • Lower Leakage Current : 10 μA (Max.) @ VDS= 100V • Lower RDS(ON) : 0.289 Ω(Typ.)

FAIRCHILD

仙童半导体

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A

IRF

IRF510N

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF

IRF510N

Repetitive Avalanche Rated

文件:111.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF510N

HEXFET Power MOSFET

文件:331.86 Kbytes Page:9 Pages

IRF

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

PANASONIC

松下

POWER RECTIFIERS(5.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers ULTRA FAST POWER RECTIFIERS 5.0 AMPERES 500 -- 1000 VOLTS

MOSPEC

统懋

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE- 20 to 100 Volts CURRENT- 5.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,high efficiency • High surge capacity • For

PANJIT

強茂

POWER RECTIFIERS(5.0A,500-1000V)

ULTRA FAST RECTIFIERS 5.0 AMPERES 500-1000 VOLTS

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Surface Mount Schkttky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 5.0 AMPERES 70 - 100 VOLTS

MOSPEC

统懋

更新时间:2026-8-3 8:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
7000
VISHAY/威世
25+
TO-220
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
IR
25+
TO-220
10000
原装现货假一罚十
VISHAY欢迎订购
23+
TO-220
89630
当天发货全新原装现货
I
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
VISHAY特价欢迎订购
25+23+
TO-220
20229
绝对原装正品全新进口深圳现货
VBsemi
25+
TO220
9000
只做原装正品 有挂有货 假一赔十
VISHAY欢迎订购
26+
TO-220
86720
全新原装正品价格最实惠 假一赔百
原装正品
23+
TO-220
56166
##公司主营品牌长期供应100%原装现货可含税提供技术
VBsemi
21+
TO220
10065
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