IRF45价格

参考价格:¥75.6679

型号:IRF450 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRF45多少钱,2025年最近7天走势,今日出价,今日竞价,IRF45批发/采购报价,IRF45行情走势销售排行榜,IRF45报价。
型号 功能描述 生产厂家 企业 LOGO 操作

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Fairchild

仙童半导体

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

Intersil

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

IRF

isc N-Channel MOSFET Transistor

DESCRIPTION • 13A,500V • RDS(on)=0.4Ω • SOA is Power Dissipation Limited • Linear Transfer Characteristics • Related Literature APPLICATIONS • Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipola

ISC

无锡固电

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching sp

NELLSEMI

尼尔半导体

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

Samsung

三星

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

Samsung

三星

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

Samsung

三星

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

Samsung

三星

HiRel MOSFETs

Infineon

英飞凌

N-CHANNEL POWER MOSFET

文件:19.01 Kbytes Page:2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件:196.98 Kbytes Page:3 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件:196.98 Kbytes Page:3 Pages

SEME-LAB

isc N-Channel MOSFET Transistor

文件:48.87 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件:48.89 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:48.87 Kbytes Page:2 Pages

ISC

无锡固电

Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3

ETC

知名厂家

IRF45产品属性

  • 类型

    描述

  • 型号

    IRF45

  • 功能描述

    MOSFET N-CH 500V 12A TO-3-3

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-16 16:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
QFN
18000
原厂直接发货进口原装
IR
25+23+
TO-3P
44679
绝对原装正品全新进口深圳现货
IOR
25+
CAN
3000
全新原装、诚信经营、公司现货销售
HAR/IR
24+
TO-3
234
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR/VISHAY
25+
TO-3
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
25+
TO-247
30000
代理全新原装现货,价格优势
IOR
9
全新原装 货期两周
IR
24+
TO-3
9750
郑重承诺只做原装进口现货
IR
96+
TO-3
2500
全新原装绝对自己公司现货特价!

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