13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

isc N-Channel MOSFET Transistor

DESCRIPTION • 13A,500V • RDS(on)=0.4Ω • SOA is Power Dissipation Limited • Linear Transfer Characteristics • Related Literature APPLICATIONS • Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipola

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching sp

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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HEADER STRIPS .100??Grid Solder Tail Double Row

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Supporting the Intel Celeron processor

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Celeron M Processor on 65 nm Process

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Industrial 15/16 (24mm) diameter 1/2 watt composition variable resistor

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Ultra-Ripple, Long-life, Inverter Grade, Radial Leaded The Ultimate in Ripple for Plug-in

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