13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

isc N-Channel MOSFET Transistor

DESCRIPTION • 13A,500V • RDS(on)=0.4Ω • SOA is Power Dissipation Limited • Linear Transfer Characteristics • Related Literature APPLICATIONS • Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipola

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control, circuits UPS and general purpose switching applications. The Nell IRF450 is a three-terminal silicon device with current conduction capability of 14A, fast switching sp

HiRel MOSFETs

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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High Voltage Transistors

High Voltage Transistors PNP Silicon

PNP medium frequency transistor

DESCRIPTION PNP medium frequency transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • HF and IF stages in radio receivers • Mixer stages in AM receivers.

Single Supply, Low-Power, High Output, Current Feedback Amplifier

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Single Supply, Low-Power, High Output, Current Feedback Amplifier

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Square Type

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