型号 功能描述 生产厂家 企业 LOGO 操作
IRF452

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

Samsung

三星

IRF452

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF452

isc N-Channel MOSFET Transistor

文件:48.89 Kbytes Page:2 Pages

ISC

无锡固电

GAS DISCHARGE TUBE - 8x10mm

This product is not recommended for new designs. Please refer to Littelfuse series SL1021A. 3-electrode (20kA/10A) Enhanced Discharge Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protecti

Littelfuse

力特

Ribbon Cable Wiremount Socket Assembly

文件:126.46 Kbytes Page:2 Pages

3M

NANO2 SIO-BIO Fuse 452/454 Series

文件:110.99 Kbytes Page:1 Pages

Littelfuse

力特

Ribbon Cable Wiremount Socket Assembly

文件:126.46 Kbytes Page:2 Pages

3M

3M Scotch-Weld??Instant Adhesive Activators and Primers

文件:244.13 Kbytes Page:3 Pages

3M

IRF452产品属性

  • 类型

    描述

  • 型号

    IRF452

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    N-CHANNEL POWER MOSFETS

更新时间:2025-11-17 22:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
CAN
12000
全新原装假一赔十
INFINEON/英飞凌
25+
TO-3
54648
百分百原装现货 实单必成 欢迎询价
IR
24+
TO-3
990000
明嘉莱只做原装正品现货
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
25+
QFN
18000
原厂直接发货进口原装
IR
TO3
6000
绝对原装自己现货
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
25+23+
TO-247
30300
绝对原装正品全新进口深圳现货
IR
24+
TO-3
10000
IR
23+
TO-3
54995
##公司主营品牌长期供应100%原装现货可含税提供技术

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