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型号 功能描述 生产厂家 企业 LOGO 操作
IRF451

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

SAMSUNG

三星

IRF451

N-CHANNE POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF451

isc N-Channel MOSFET Transistor

文件:48.87 Kbytes Page:2 Pages

ISC

无锡固电

IRF451

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

GENERAL PURPOSE RECTIFIER

POWEREX

Phase Control SCR 1500 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H

POWEREX

Single Supply, Low-Power, High Output, Programmable Buffer

文件:252.48 Kbytes Page:12 Pages

NSC

国半

Single Supply, Low-Power, High Output, Programmable Buffer

文件:252.48 Kbytes Page:12 Pages

NSC

国半

Silicon N-Channel JFET Transistor VHF/UHF Amplifier

文件:23.15 Kbytes Page:2 Pages

NTE

IRF451产品属性

  • 类型

    描述

  • 型号

    IRF451

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    N-CHANNEL POWER MOSFETS

更新时间:2026-5-25 10:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
D2-pak
7300
普通
IR
2022+
D2-pak
7300
原厂代理 终端免费提供样品
IR
23+
TO-3
54994
##公司主营品牌长期供应100%原装现货可含税提供技术
IR/MOT
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
23+
D2-pak
7000
IR
24+
TO-3
10000
IR
23+
8000
专注配单,只做原装进口现货

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