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IRF44价格

参考价格：￥74.1664

型号：IRF440 品牌：International Rectifier 备注：这里有IRF44多少钱，2025年最近7天走势，今日出价，今日竞价，IRF44批发/采购报价，IRF44行情走势销售排行榜，IRF44报价。

型号	功能描述	生产厂家企业	LOGO
IRF440	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	Samsung 三星	Samsung
IRF440	N-Channel Power MOSFETs, 8A, 450 V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.	Fairchild 仙童半导体	Fairchild
IRF440	8A, 500V, 0.850 Ohm, N-Channel Power MOSFET 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are	Intersil	Intersil
IRF440	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever	IRF	IRF
IRF440	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF440	N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe	ARTSCHIP	ARTSCHIP
IRF440-443	N-Channel Power MOSFETs, 8A, 450 V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.	Fairchild 仙童半导体	Fairchild
IRF441	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	Samsung 三星	Samsung
IRF441	N-Channel Power MOSFETs, 8A, 450 V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.	Fairchild 仙童半导体	Fairchild
IRF441	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF441	N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe	ARTSCHIP	ARTSCHIP
IRF442	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF442	N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe	ARTSCHIP	ARTSCHIP
IRF442	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	Samsung 三星	Samsung
IRF442	N-Channel Power MOSFETs, 8A, 450 V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.	Fairchild 仙童半导体	Fairchild
IRF443	N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe	ARTSCHIP	ARTSCHIP
IRF443	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	Samsung 三星	Samsung
IRF443	N-Channel Power MOSFETs, 8A, 450 V/500V Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.	Fairchild 仙童半导体	Fairchild
IRF443	N-CHANNEL POWER MOSFETS FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF440	Repetitive Avalanche Ratings 文件：146.27 Kbytes Page：7 Pages	IRF	IRF
IRF440	isc N-Channel MOSFET Transistor 文件：49.06 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF440	N-CHANNEL POWER MOSFETS	Samsung 三星	Samsung
IRF440	HiRel MOSFETs	Infineon 英飞凌	Infineon
IRF440_15	Repetitive Avalanche Ratings 文件：146.27 Kbytes Page：7 Pages	IRF	IRF
IRF440R	Avalanche Energy Rated N-Channel Power MOSFETs 文件：703.77 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF440R	Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3	ETC 知名厂家	ETC
IRF4410	N-Channel Power MOSFET 文件：699.77 Kbytes Page：9 Pages	NELLSEMI 尼尔半导体	NELLSEMI
IRF441-F2	N-Channel MOSFET Transistor 文件：200.84 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF442	isc N-Channel MOSFET Transistor 文件：49.07 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF443	isc N-Channel MOSFET Transistor 文件：49.06 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF4435TRPBF	P-Channel 30-V (D-S) MOSFET 文件：1.14294 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI

IRF44产品属性

类型
描述
型号
IRF44
制造商
International Rectifier
功能描述
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-3
制造商
International Rectifier
功能描述
TRANS MOSFET N-CH 500V 8A 2PIN TO-204AA - Bulk
制造商
Rochester Electronics LLC
功能描述
HEXFET, HI-REL - Bulk
制造商
International Rectifier
功能描述
N CHANNEL MOSFET, 500V, 8A TO-204AA; Transistor
Polarity
N Channel; Continuous Drain Current
Id
8A; Drain Source Voltage
Vds
500V; On Resistance
Rds(on)
850mohm; Rds(on) Test Voltage
Vgs
10V; Threshold Voltage Vgs
Typ
4V ;RoHS
Compliant
No
制造商
Harris Corporation
功能描述
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) TO-204AE

IRF44供应商更多...

更新时间：2025-12-16 16:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	IRF440	IR	25+	QFN	18000	原厂直接发货进口原装	询价
深圳市得捷芯城科技有限公司	IRF440	IR	24+	NA/	3260	原装现货,当天可交货,原型号开票	询价
深圳市欧立现代科技有限公司	IRF440	mospec	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市一线半导体有限公司	IRF440	IR	24+	TO-3	10000		询价
深圳市赛特兴科技有限公司	IRF440	IR	QQ咨询	189-8877-7135	66	全新原装研究所指定供货商	询价
深圳市福田区绿盛电子商行	IRF440	IR	2015+	TO-3(铁帽)	19889	一级代理原装现货,特价热卖!	询价
深圳市振宏微科技有限公司	IRF440,BD6974FV,FDC6326L	TO204AA	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
上海金庆电子技术有限公司	IRF440	UNMARKED	新		25	全新原装货期两周	询价
深圳市能元时代电子有限公司	IRF440	NO	23+		56148	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市赛尔通科技有限公司	IRF440		23+		65480		询价

IRF44芯片相关品牌

IRF44规格书下载地址

IRF44参数引脚图相关

IRF44数据表相关新闻

IRF5305PBF
原装进口代理
2022-10-19
IRF520NPBF
全新原装现货支持第三方机构验证
2022-10-19
IRF3710STRLPBF 原装正品
INFINEON/英飞凌现货100K
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IRF3205ZSTRLPBF
IRF3205ZSTRLPBF
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IRF3710PBF原装现货
IRF3710PBF原装正品
2021-8-9
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17

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IRF44价格

IRF44产品属性

IRF44供应商更多...

IRF44芯片相关品牌

IRF44规格书下载地址

IRF44参数引脚图相关

IRF44数据表相关新闻

IRF5305PBF

IRF520NPBF

IRF3710STRLPBF 原装正品

IRF3205ZSTRLPBF

IRF3710PBF原装现货

IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470

DdatasheetPDF页码索引