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型号 功能描述 生产厂家 企业 LOGO 操作
IRF442

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

FAIRCHILD

仙童半导体

IRF442

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

SAMSUNG

三星

IRF442

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF442

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

ARTSCHIP

IRF442

Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF442

isc N-Channel MOSFET Transistor

文件:49.07 Kbytes Page:2 Pages

ISC

无锡固电

Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Plastic Medium Power Silicon PNP Transistor

4.0 AMPERES POWER TRANSISTORS PNP SILICON . . . for amplifier and switching applications. Complementary types are BD437 and BD441.

MOTOROLA

摩托罗拉

Dual Low Power JFET Input Operational Amplifier

文件:440.89 Kbytes Page:12 Pages

NSC

国半

Dual Low Power JFET Input Operational Amplifier

文件:440.89 Kbytes Page:12 Pages

NSC

国半

Dual Low Power JFET Input Operational Amplifier

文件:440.89 Kbytes Page:12 Pages

NSC

国半

Dual Low Power JFET Input Operational Amplifier

文件:440.89 Kbytes Page:12 Pages

NSC

国半

IRF442产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    500V

  • Maximum Continuous Drain Current:

    7A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-8-3 15:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOP8
4500
原装正品!现货热卖!
IR
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
IR
24+
SOP8
4500
只做原装正品现货 欢迎来电查询15919825718
IR
22+
SOP-8
8000
原装正品支持实单
IR
23+
DIP-8
8000
专注配单,只做原装进口现货
IR
23+
DIP-8
7000
IR
22+
TO-3
20000
公司只做原装 品质保障
IOR
05+
原厂原装
4801
只做全新原装真实现货供应
IR
23+
TO-3
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
IOR
24+
SMD
342

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