N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Product Summary The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior rever

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

HiRel MOSFETs

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8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re

isc N-Channel MOSFET Transistor

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N-CHANNEL POWER MOSFETS

Repetitive Avalanche Ratings

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N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

Repetitive Avalanche Ratings

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Avalanche Energy Rated N-Channel Power MOSFETs

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Plastic Medium Power Silicon PNP Transistor

4.0 AMPERES POWER TRANSISTORS PNP SILICON . . . for amplifier and switching applications. Complementary types are BD437 and BD441.

POWER TRANSISTORS PNP SILICON

4.0 AMP POWER TRANSISTORS PNP SILICON This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary types are BD437 and BD441. Features • Pb−Free Packages are Available*

HITAG proximity reader module hardware

GENERAL DESCRIPTION HITAG(1) is the name of one of the universal and powerful product lines of our 125 kHz family. The contactless proximity read and write system that works with passive transponders is suitable for various applications. Inductive coupling helps you to achieve reading ranges up t

HITAG proximity reader module hardware

GENERAL DESCRIPTION HITAG(1) is the name of one of the universal and powerful product lines of our 125 kHz family. The contactless proximity read and write system that works with passive transponders is suitable for various applications. Inductive coupling helps you to achieve reading ranges up t

High-Speed, Low-Power, Voltage Feedback Op Amp

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