N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

High Power,High Speed Applications

DESCRIPTION • Drain Current ID=12A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies • UPS • Motor controls • High energy pulse circuits.

N-CHANNEL POWER MOSFETS

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.5mΩ • Enhancement mode: • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

HEXFET

Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability •Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Powe

High Efficiency Synchronous Rectification in SMPS

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

High Efficiency Synchronous Rectification in SMPS

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow

HEXFET Power MOSFET

High Efficiency Synchronous Rectification in SMPS

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24V 单 N 通道 HEXFET 功率 MOSFET，采用无铅 7 引脚 D2-Pak 封装

High Efficiency Synchronous Rectification in SMPS

文件：266.26 Kbytes Page：10 Pages

High Efficiency Synchronous Rectification in SMPS

文件：266.26 Kbytes Page：10 Pages

High Efficiency Synchronous Rectification in SMPS

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1 5/16

FEATURES • Suitable model for all industrial applications • Center tap available • Continuous rotation and mechanical stops both standard • Large electrical angle: 352° ± 2° • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Fixed RF Inductors

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1 5/16(33.3mm) Low Cost Indeustrial Single Turn Wirewound, Bushing Mount Type Potentiometer

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