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IRF132价格
参考价格:¥9.7835
型号:IRF1324PBF 品牌:International 备注:这里有IRF132多少钱,2025年最近7天走势,今日出价,今日竞价,IRF132批发/采购报价,IRF132行情走势销售排行榜,IRF132报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF132 | N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半导体 | ||
IRF132 | N-ChannelPowerMOSFETs,20A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF132 | HighPower,HighSpeedApplications DESCRIPTION •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.5mΩ •Enhancementmode: •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | |||
HEXFETPowerMOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPowe | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
HEXFETPowerMOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | |||
HEXFETPowerMOSFET Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS Benefits •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheSOA •EnhancedbodydiodedV/dtanddI/dtCapability •Lead-Free Applications •HighEfficiencySynchronousRectificationinSMPS •UninterruptiblePowerSupply •HighSpeedPow | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS 文件:457.13 Kbytes Page:8 Pages | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS 文件:266.26 Kbytes Page:10 Pages | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS 文件:266.26 Kbytes Page:10 Pages | IRF International Rectifier | |||
HighEfficiencySynchronousRectificationinSMPS 文件:526.79 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
15/16 FEATURES •Suitablemodelforallindustrialapplications •Centertapavailable •Continuousrotationandmechanicalstops bothstandard •Largeelectricalangle:352°±2° •Materialcategorization:Fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | |||
FixedRFInductors 文件:90.69 Kbytes Page:1 Pages | COILCRAFTCoilcraft lnc. 线艺美国线艺公司 | |||
RUGGEDandLIGHTWEIGHTALUMINUMBATTERYHOLDERS 文件:115.71 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
15/16(33.3mm)LowCostIndeustrialSingleTurnWirewound,BushingMountTypePotentiometer 文件:75.24 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
AluminumCapacitorsAxialLongLife,DIN-Based 文件:128.35 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |
IRF132产品属性
- 类型
描述
- 型号
IRF132
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
N-CHANNEL POWER MOSFETS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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IR |
24+ |
NA/ |
3282 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon/英飞凌 |
23+ |
TO-220(TO-220-3) |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
21+ |
TO-220(TO-220-3) |
6820 |
只做原装,质量保证 |
|||
IR |
22+ |
SOT-263-7 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
25+ |
TO263-7 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
INFINEON/英飞凌 |
25+ |
TO263-7 |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
1815+ |
TO263-7 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
2024+ |
TO-220-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
Infineon/英飞凌 |
24+ |
TO-220(TO-220-3) |
25000 |
原装正品,假一赔十! |
IRF132规格书下载地址
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2013-2-8
DdatasheetPDF页码索引
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