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IRF1324价格
参考价格：￥9.7835
型号：IRF1324PBF 品牌：International 备注：这里有IRF1324多少钱，2026年最近7天走势，今日出价，今日竞价，IRF1324批发/采购报价，IRF1324行情走势销售排行榜，IRF1324报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1324 | N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.5mΩ • Enhancement mode: • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IRF1324 | 24V 单个 n 通道 HEXFET Power MOSFET, 采用无铅 TO-220AB 封装 | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow | IRF | | ||
HEXFETPower MOSFET Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability •Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Powe | IRF | | ||
High Efficiency Synchronous Rectification in SMPS Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow | INFINEON 英飞凌 | | ||
HEXFET Power MOSFET Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow | IRF | | ||
HEXFET Power MOSFET Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow | IRF | | ||
High Efficiency Synchronous Rectification in SMPS Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Pow | IRF | | ||
HEXFET Power MOSFET | INFINEON 英飞凌 | | ||
High Efficiency Synchronous Rectification in SMPS 文件：457.13 Kbytes Page：8 Pages | IRF | | ||
24V 单 N 通道 HEXFET 功率 MOSFET，采用无铅 7 引脚 D2-Pak 封装 | INFINEON 英飞凌 | | ||
High Efficiency Synchronous Rectification in SMPS 文件：266.26 Kbytes Page：10 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：266.26 Kbytes Page：10 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：526.79 Kbytes Page：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Ultrahigh Speed Pin Driver with Inhibit Mode Ultrahigh Speed Pin Driver with Inhibit Mode | AD 亚德诺 | | ||
Quadruple Operational Amplifiers The AN1324 (AN6564)and the AN1324NS (AN6564NS)are quadruple operational amplifiers with phase compensation circuits built-in, and with wide range of operating voltages, allowing single power supply operation. They have electrical characteristics equal to the conventional operational amplifiers, | PANASONIC 松下 | | ||
Quadruple Operational Amplifiers The AN1324 (AN6564)and the AN1324NS (AN6564NS)are quadruple operational amplifiers with phase compensation circuits built-in, and with wide range of operating voltages, allowing single power supply operation. They have electrical characteristics equal to the conventional operational amplifiers, | PANASONIC 松下 | | ||
High-Power Density 1W Laser Diode Description The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine tuning of wavelength is possible by controlling the laser chip temperature. Features • High power Recommended optical power output :1. | SONYSony Corporation 索尼 | | ||
Ultra low-voltage stereo filter DAC 文件：107.33 Kbytes Page：20 Pages | PHILIPS 飞利浦 | |
IRF1324产品属性
- 类型
描述
- 型号
IRF1324
- 功能描述
MOSFET 24V 1 N-CH HEXFET 1.65mOhms 160nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon(英飞凌) |
25+ |
D2PAK-7 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
IR |
23+ |
TO-220 |
48510 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
25+ |
D2-PAK7-LEA |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INFINEON/英飞凌 |
25+ |
TO220 |
20300 |
INFINEON/英飞凌原装特价IRF1324PBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220AB |
60000 |
||||
INFINEON/英飞凌 |
25+ |
TO220 |
10000 |
现货,来电咨询 |
|||
IR |
23+ |
TO-220AB |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
IRF1324规格书下载地址
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DdatasheetPDF页码索引
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