IR230价格

参考价格:¥9.9688

型号:IR2301PBF 品牌:INTERNATIONAL 备注:这里有IR230多少钱,2025年最近7天走势,今日出价,今日竞价,IR230批发/采购报价,IR230行情走势销售排行榜,IR230报价。
型号 功能描述 生产厂家&企业 LOGO 操作

HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

IRF

HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

IRF

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

IRF

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

IRF

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

IRF

HALF-BRIDGE DRIVER

Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with inde pendent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o

IRF

HALF-BRIDGE DRIVER

Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with inde pendent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o

IRF

HALF-BRIDGE DRIVER

Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with inde pendent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o

IRF

HALF-BRIDGE DRIVER

Description The IR2308(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rug gedized monolithic construction. Features •Floating channel designed for

IRF

HALF-BRIDGE DRIVER

Description The IR2308(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rug gedized monolithic construction. Features •Floating channel designed for

IRF

HALF-BRIDGE DRIVER

Description The IR2308(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rug gedized monolithic construction. Features •Floating channel designed for

IRF

HIGH AND LOW SIDE DRIVER

文件:195.87 Kbytes Page:18 Pages

IRF

HIGH AND LOW SIDE DRIVER

文件:193.49 Kbytes Page:18 Pages

Infineon

英飞凌

HIGH AND LOW SIDE DRIVER

文件:195.87 Kbytes Page:18 Pages

IRF

封装/外壳:8-DIP(0.300",7.62mm) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRV HI-SIDE/LO-SIDE 8DIP 集成电路(IC) 栅极驱动器

Infineon

英飞凌

HIGH AND LOW SIDE DRIVER

文件:193.49 Kbytes Page:18 Pages

Infineon

英飞凌

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HI/LOW SIDE 8SOIC 集成电路(IC) 栅极驱动器

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件:214.81 Kbytes Page:22 Pages

Infineon

英飞凌

Gate drive supply range from 5 to 20V

文件:212.75 Kbytes Page:22 Pages

IRF

HALF-BRIDGE DRIVER

文件:212.75 Kbytes Page:22 Pages

IRF

HALF-BRIDGE DRIVER

文件:212.75 Kbytes Page:22 Pages

IRF

HALF-BRIDGE DRIVER

文件:214.81 Kbytes Page:22 Pages

Infineon

英飞凌

Gate drive supply range from 5 to 20V

文件:212.75 Kbytes Page:22 Pages

IRF

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:213.71 Kbytes Page:8 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:213.71 Kbytes Page:8 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:211.59 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:109.67 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:109.67 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:109.68 Kbytes Page:8 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件:109.67 Kbytes Page:8 Pages

IRF

HALF-BRIDGE DRIVER

文件:109.68 Kbytes Page:8 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件:109.67 Kbytes Page:8 Pages

IRF

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

STMICROELECTRONICS

意法半导体

Modular Radio Telemetry System

文件:396.37 Kbytes Page:11 Pages

RFSOLUTIONS

rfsolutions.ltd

1/4 FLAT PLUG PHONE PLUGS

文件:26.97 Kbytes Page:1 Pages

SWITCH

Switch Publishing Co.,Ltd.

MINIATURE FUSES - 5x20 mm

文件:60.42 Kbytes Page:2 Pages

Littelfuse

力特

5x20 mm MINIATURE FUSES

文件:60.72 Kbytes Page:2 Pages

Littelfuse

力特

IR230产品属性

  • 类型

    描述

  • 型号

    IR230

  • 制造商

    Knoll Systems

  • 功能描述

    Peephole Style Infrared Receiver

  • 制造商

    KNOLL SYSTEMS

  • 功能描述

    IR REPEATER RECEIVER ONLY PEEPHOLE RECEIVER

更新时间:2025-8-17 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Intern
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
INFINEON/英飞凌
2021+
57000
十年专营原装现货,假一赔十
IR
2016+
SOP8
7522
只做原装,假一罚十,公司可开17%增值税发票!
IR
24+
SOP-8
500551
免费送样原盒原包现货一手渠道联系
IR
25+
SOP-8
880000
明嘉莱只做原装正品现货
Infineon/英飞凌
24+
SOIC-8N
25000
原装正品,假一赔十!
IR
22+
SMD
8000
原装正品支持实单
Infineon/英飞凌
21+
SOIC-8N
6820
只做原装,质量保证
IR
25+
SOP-8
3200
全新原装、诚信经营、公司现货销售
IR
24+
SOP8
12
只做原厂渠道 可追溯货源

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  • IR2302-高端和低端驱动器

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