HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

HIGH AND LOW SIDE DRIVER

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HIGH AND LOW SIDE DRIVER

Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LS

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HI/LOW SIDE 8SOIC 集成电路（IC） 栅极驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HI/LOW SIDE 8SOIC 集成电路（IC） 栅极驱动器

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

SOT-23 Plastic-Encapsulate MOSFETS

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-2.8A竊?20V P-CHANNEL MOSFET

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10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages