HALF-BRIDGE DRIVER

Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with inde pendent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS o

HALF-BRIDGE DRIVER

文件：211.59 Kbytes Page：8 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb