IPP60R600E6价格

参考价格:¥4.1767

型号:IPP60R600E6 品牌:Infineon 备注:这里有IPP60R600E6多少钱,2025年最近7天走势,今日出价,今日竞价,IPP60R600E6批发/采购报价,IPP60R600E6行情走势销售排行榜,IPP60R600E6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPP60R600E6

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

IPP60R600E6

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

IPP60R600E6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.22433 Mbytes Page:17 Pages

Infineon

英飞凌

IPP60R600E6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.22433 Mbytes Page:17 Pages

Infineon

英飞凌

IPP60R600E6产品属性

  • 类型

    描述

  • 型号

    IPP60R600E6

  • 功能描述

    MOSFET N-CH 650V 7.3A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-2 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
21000
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
24+
TO220
880000
明嘉莱只做原装正品现货
INFINEON
25+23+
TO-220
34602
绝对原装正品全新进口深圳现货
INFINEON/英飞凌
24+
TO220
8950
BOM配单专家,发货快,价格低
INFINEON/英飞凌
24+
TO-220
10000
只做原装欢迎含税交易,假一赔十,放心购买
Infineon(英飞凌)
24+
TO-220
7793
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
24+
TO220
54000
郑重承诺只做原装进口现货
INFINEON/英飞凌
25+
TO-220
13000
全新原装正品支持含税
INFINEON/英飞凌
24+
TO220
9600
原装现货,优势供应,支持实单!
Infineon Technologies
23+
TO2203
9000
原装正品,支持实单

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