位置：首页 > IC中文资料 > IIPD60R600E6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IIPD60R600E6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
600VCoolMOSE6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600VCoolMOSE6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.22433 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
IR |
23+ |
DIP |
7000 |
||||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
21+ |
QFN |
10000 |
原装现货假一罚十 |
|||
ST(意法半导体) |
2021+ |
LGA-12(2x2) |
499 |
||||
ST |
25+ |
VFLGA-12221 |
16900 |
原装，请咨询 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
24+ |
LGA-12 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
原装现货,实单价优 |
|||
ST/意法 |
23+ |
VFLGA-12221 |
3000 |
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IIPD60R600E6芯片相关品牌
IIPD60R600E6规格书下载地址
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IIPD60R600E6数据表相关新闻
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制造商零件编号IHW30N160R2FKSA1 ManufacturerOrOEMInfineonTechnologies 描述IGBT1600V60A312WTO247-3 说明IGBTNPT，沟槽型场截止1600V60A312W通孔PG-TO247-3 对无铅/(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL）1（无限） 最低订购数量240 标准包装
2020-12-14
DdatasheetPDF页码索引
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